8N80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
800
UNIT
V
V
A
A
Drain-Source Voltage
Gate-Source Voltage
±30
8
32
8
850
17.8
4.5
Drain Current (Continuous) (TC=25°C)
Drain Current (Pulsed) (Note 1)
Avalanche Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor above TC=25°C
Junction Temperature
IDM
IAR
EAS
EAR
A
mJ
mJ
V/ns
W
W/°C
°C
°C
dv/dt
178
PD
1.43
+150
-55~+150
TJ
TSTG
Storage Temperature
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
0.7
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
800
V
△BVDSS/△T
J Reference to 25°C, ID=250µA
0.5
V/°C
VDS=800V, VGS=0V
VDS=640V, TC=125°C
VGS=±30V, VDS=0V
10
100
±100 nA
Drain-Source Leakage Current
IDSS
IGSS
µA
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VDS=50V, ID=4A
3.0
5.0
0.94 1.55
5.6
V
Ω
S
CISS
COSS
CRSS
1580 2050 pF
135 175 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
13
17
pF
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
Gate to Source Charge
QG
QGS
QGD
35
10
14
40
45
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=640V, ID=8A
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
tD(ON)
tR
tD(OFF)
tF
90
110 230
65
70
VDD=400V, ID=8A, RG=25Ω
140
150
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
IS
8
A
A
ISM
32
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 1)
Reverse Recovery Charge (Note 1)
VSD
tRR
QRR
IS=8A, VGS=0V
1.4
V
ns
µC
690
8.2
IS=8A, VGS=0V, dIF/dt=100A/µs
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-471.a
www.unisonic.com.tw
