8N50H
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
±30
V
Continuous (TC=25°C)
7 (Note 2)
7
A
Avalanche Current (Note 3)
IAR
A
Single Pulsed Avalanche Energy (Note 4)
Power Dissipation
EAS
270
mJ
W
PD
Junction Temperature
TJ
+150
°C
°C
Storage Temperature
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 10mH, IAS = 8A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
GS=+30V, VDS=0V
500
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3.5A
2.0
4.0
1
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.8
ꢀ
CISS
COSS
CRSS
pF
pF
pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
12.8 16.6 nC
V
V
DD=50V, ID=1.3A, IG=100uA,
GS=10V (Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
3.7
5.8
6
nC
nC
ns
20
55 120 ns
VDD=30V, ID=0.5A, RG =25ꢀ,
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
25
35
60
80
ns
ns
VGS=0~10V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Drain-Source Diode Forward Voltage
IS
7
A
V
VSD
IS=7A, VGS=0V
1.4
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-745.A
www.unisonic.com.tw
