8N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
GS=+30V, VDS=0V
500
2.0
V
25
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.77 0.85
ꢀ
CISS
COSS
CRSS
850 1130 pF
115 155 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
9
13.5 pF
QG
QGS
QGD
tD(ON)
tR
18
5
24
nC
nC
nC
ns
VGS=10V, VDS=400V, ID=8A
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
7.5
15
38
40
86
ns
VDD=250V, ID=8A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
46 102 ns
33
76
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
8
A
A
32
1.6
IS=8A, VGS=0V
V
44
45
ns
µC
IS=8A, VGS=0V,
dIF/dt=100A/µs (Note 1)
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-546.c
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