8N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
700
±30
8
VGSS
V
TC=25°C
A
Continuous
ID
Drain Current
TC=100°C
4.8
A
Pulsed (Note 4)
Repetitive (Note 2)
Repetitive (Note 3)
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220
IDM
IAR
32
A
8
A
Avalanche Current
Avalanche Energy
IAS
8
A
EAS
EAR
266
11.6
147
40
mJ
mJ
Power Dissipation (TC=25°C)
PD
W
TO-220F
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 7.74mH, IAS = 8A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. Limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220
0.85
Junction to Case
θJC
°C/W
TO-220F
3.1
Note: 3urface mounted on FR4 board t≤10sec
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=700V, VGS=0V
GS=+30V, VDS=0V
700
V
1
µA
Forward
Reverse
V
+10 nA
-10 nA
Gate-Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
1.2 1.4
ꢀ
CISS
COSS
CRSS
2006
148
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
13.7
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-711.D
www.unisonic.com.tw
