8N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
700
±30
8
VGSS
V
TC=25°C
A
Continuous
ID
Drain Current
TC=100°C
4.8
A
Pulsed (Note 4)
IDM
IAS
32
A
Avalanche Current
Avalanche Energy
Junction Temperature
Repetitive (Note 3)
Single Pulsed (Note 3)
8
A
EAS
TJ
300
+150
49
mJ
°C
W
°C
Power Dissipation (TC=25°C)
Storage Temperature
PD
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 9.37mH, IAS = 8A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. Limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.55
Note: 3urface mounted on FR4 board t≤10sec
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=700V, VGS=0V
DS=560V, TC=125°С
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
700
V
1
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
V
100 µA
+10 nA
-10 nA
Forward
Reverse
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4A
2.0
4.0
1.4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
1120
113
21
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
82
85
125
60
26
8
ns
ns
VDD =30V, ID =0.5A,
RG=25ꢀ (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
ns
ns
Total Gate Charge
QG
nC
nC
nC
VDS=50V, VGS=10V,
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
ID=1.3A (Note 1, 2)
6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
Integral reverse diode in the
MOSFET
8
A
A
V
ISM
VSD
32
1.4
IS=8A, VGS=0V
Notes: 1. Essentially independent of operating temperature.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R205-034.B
www.unisonic.com.tw
