8N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
900
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C
0.95
VDS=900V, VGS=0V
10
Drain-Source Leakage Current
IDSS
IGSS
VDS=720V, TC=125°C
VDS=0V ,VGS=±30V
100
µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VDS=50V, ID=4A4
3.0
5.0
1300 1550 mΩ
5.5
V
S
CISS
COSS
CRSS
1600 2080 pF
Output Capacitance
V
DS=25V,VGS=0V,f=1.0MHz
DS=720V, VGS=10V, ID=8A
130 170
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
12
15
45
QG
QGS
QGD
tD(ON)
tR
35
10
14
40
nC
nC
nC
ns
ns
ns
ns
Gate-Source Charge
V
Gate-Drain Charge
Turn-ON Delay Time
90
Turn-ON Rise Time
110 230
VDD=450V, ID=8A, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
tF
70
70
150
150
Turn-OFF Fall Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
8
A
A
25
1.4
IS =8A, VGS=0V
V
530
5.8
ns
μC
VGS=0V, IS=8A,
dIF/dt=100A/μs (Note 1)
QRR
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-470.d
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