8N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current (TC=25°C)
Pulsed Drain Current (Note 1)
Avalanche Current (Note 1)
SYMBOL
RATINGS
UNIT
V
V
A
A
VDSS
VGSS
ID
IDM
IAR
900
±30
8
25
6.3
A
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor above TC=25°C
Junction Temperature
EAS
EAR
dv/dt
850
17.1
4.0
mJ
mJ
V/ns
W
W/°C
°C
°C
147
PD
1.17
+150
-55~+150
TJ
TSTG
Storage Temperature
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=40mH, IAS=6.3A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
θJC
0.85
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS=0V, ID=250µA
900
V
ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C
0.95
V/°C
VDS=900V, VGS=0V
IDSS
10
µA
µA
Drain-Source Leakage Current
VDS=720V, TC=125°C
100
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
IGSS
VDS=0V ,VGS=±30V
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VDS=50V, ID=4A4
3.0
5.0
940 1550 mΩ
5.5
V
S
CISS
COSS
CRSS
1600 2080 pF
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
130
12
170
15
pF
pF
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
QG
QGS
QGD
tD(ON)
tR
35
10
14
40
110
70
45
nC
nC
nC
ns
ns
ns
ns
VDS=720V, VGS=10V, ID=8A
90
Turn-ON Rise Time
230
150
150
VDD=450V, ID=8A, RG=25Ω
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
70
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
tRR
QRR
8
25
1.4
A
A
V
ns
μC
IS =8A, VGS=0V
VGS=0V, IS=8A, dIF/dt=100A/μs
(Note 1)
530
5.8
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-470.b
www.unisonic.com.tw
