SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZTA92
ISSUE 2 JANUARY 1996
✪
FEATURES
*
High breakdown voltage
C
APPLICATIONS
*
Suitable for video output stages in TV sets
and switch mode power supplies
E
C
COMPLIMENTARY TYPE
PARTMARKING DETAIL
FZTA42
B
DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IB
VALUE
-300
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-300
V
-5
V
Base Current
-100
mA
mA
W
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-500
Ptot
2
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-300
-300
-5
V
IC=-100µA, IE=0
IC=-1mA, IB=0*
IE=-100µA, IC=0
Collector-Emitter
Breakdown Voltage
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
-0.25
V
CB=-200V, IE=0
µA
Emitter Cut-Off Current IEBO
-0.1
-0.5
V
EB=-3V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
Static Forward Current hFE
Transfer Ratio
25
40
25
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
Transition
Frequency
fT
50
MHz
pF
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
6
VCB=-20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA92 datasheet.
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