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FZT1048A

型号:

FZT1048A

描述:

NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

3 页

PDF大小:

135 K

NPN SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ISSUE 1- FEBRUARY 1997  
FZT1048A  
FEATURES  
C
*
*
*
*
*
*
VCEO = 17.5V  
5 Amp Continuous Current  
20 Amp Pulse Current  
Low Saturation Voltage  
High Gain  
E
C
B
SOT223  
Extremely Low Equivalent On-resistance; RCE(sat) = 50mat 5A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
17.5  
5
V
V
20  
A
Continuous Collector Current  
Base Current  
IC  
5
A
IB  
500  
2.5  
mA  
W
Power Dissipation at Tamb=25°C  
Ptot  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
°C  
The power which can be dissipated assuming the device is mounted in typical manner on a PCB  
with copper equal to 2 inches x 2 inches.  
FZT1048A  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
VALUE  
PARAMETER  
SYMBOL  
UNIT  
CONDITIONS.  
MIN.  
50  
TYP.  
85  
MAX.  
Collector-Base Breakdown  
Voltage  
V
V
V
V
V
V
I =100µA  
C
(BR)CBO  
Collector-Emitter  
Breakdown Voltage  
V
CES  
50  
17.5  
50  
5
85  
24  
85  
8.7  
I =100µA*  
C
Collector-Emitter  
Breakdown Voltage  
V
V
V
I =10mA  
C
CEO  
Collector-Emitter  
Breakdown Voltage  
I =100µA, V =1V  
CEV  
EB  
C
Emitter-Base Breakdown  
Voltage  
I =100µA  
E
(BR)EBO  
Collector Cut-Off Current  
Emitter Cut-Off Current  
I
I
I
0.3  
0.3  
0.3  
10  
10  
10  
nA  
nA  
nA  
V
CB  
V
EB  
V
CE  
=35V  
=4V  
CBO  
EBO  
CES  
Collector Emitter Cut-Off  
Current  
=35V  
Collector-Emitter Saturation V  
Voltage  
27  
55  
155  
250  
45  
75  
210  
350  
mV  
mV  
mV  
mV  
I =0.5A, I =10mA*  
C B  
CE(sat)  
I =1A, I =10mA*  
C B  
I =3A, I =15mA*  
C B  
I =5A, I =25mA*  
C
B
Base-Emitter  
Saturation Voltage  
V
V
920  
1000  
mV  
I =5A, I =25mA*  
C B  
BE(sat)  
BE(on)  
FE  
Base-Emitter Turn-On  
Voltage  
880  
970  
mV  
IC=5A, V =2V*  
CE  
Static Forward Current  
Transfer Ratio  
h
280  
300  
300  
180  
50  
440  
450  
450  
300  
80  
I =10mA, V =2V*  
C CE  
I =0.5A, V =2V*  
C
CE  
1200  
I =1A, V =2V*  
C CE  
I =5A, V =2V*  
C
CE  
I =20A, V =2V*  
C
CE  
Transition Frequency  
Output Capacitance  
Switching Times  
f
150  
MHz  
I =50mA, V =10V  
f=50MHz  
T
C
CE  
C
60  
80  
pF  
ns  
V =10V, f=1MHz  
CB  
obo  
t
120  
I =4A, I =40mA, V =10V  
C B CC  
on  
t
310  
ns  
I =4A, I =40mA, V =10V  
C B CC  
off  
FZT1048A  
TYPICAL CHARACTERISTICS  
+25°C  
IC/IB=100  
1
0.8  
0.6  
0.4  
0.2  
0
0.6  
0.4  
0.2  
0
+150°C  
+100°C  
+25°C  
-55°C  
IC/IB=200  
IC/IB=100  
IC/IB=50  
1m  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
100  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
1.2  
1
IC/IB=100  
VCE=2V  
800  
600  
400  
200  
0
+100°C  
+25°C  
-55°C  
0.8  
0.6  
0.4  
0.2  
0
-55°C  
+25°C  
+100°C  
+150°C  
1m  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
100  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
1.5  
1.2  
0.9  
0.6  
0.3  
0
100  
10  
VCE=2V  
DC  
1s  
100ms  
10ms  
1ms  
100us  
1
-55°C  
+25°C  
+100°C  
+150°C  
100m  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
100  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
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