NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1- FEBRUARY 1997
FZT1048A
FEATURES
C
*
*
*
*
*
*
VCEO = 17.5V
5 Amp Continuous Current
20 Amp Pulse Current
Low Saturation Voltage
High Gain
E
C
B
SOT223
Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
17.5
5
V
V
20
A
Continuous Collector Current
Base Current
IC
5
A
IB
500
2.5
mA
W
Power Dissipation at Tamb=25°C
†
Ptot
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
†
The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.