SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 2 - JANUARY 1996
FZT869
FEATURES
*
*
*
*
*
Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A
7 Amp continuous collector current (20 Amp peak)
Very low saturation voltages
C
Excellent gain charateristics specified upto 20 Amp
Ptot =3 Watts
E
C
PARTMARKING DETAILS -
FZT869
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
6
V
Peak Pulse Current
20
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
7
3
A
Ptot
W
°C
Tj:Tstg
-55 to +150
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
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