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FZT957

型号：

FZT957

描述：

PNP硅平面高电流（高性能）晶体管[ PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

5 页

PDF大小：

103 K

下载PDF手册
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
ISSUE 3 - JANUARY 1996  
FZT957  
FZT958  
FEATURES  
*
*
*
*
1 Amp continuous current  
Up to 2 Amps peak current  
C
Very low saturation voltage  
Excellent gain characteristics specified up to 1 Amp  
E
COMPLEMENTARY TYPES - FZT957 - FZT857  
FZT958 - N/A  
C
B
PARTMARKING DETAILS -  
DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT957  
-300  
FZT958  
-400  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-300  
-400  
V
-6  
V
Peak Pulse Current  
-2  
-1  
-1.5  
-0.5  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
3
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
3 - 289  
FZT957  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-330  
-330  
-300  
-6  
-440  
-440  
-400  
-8  
V
V
V
V
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
IC=-1µA, RB ≤1kΩ  
IC=-10mA*  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
IE=-100µA  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
µA  
VCB=-300V  
VCB=-300V, Tamb=100°C  
ICER  
R ≤1kΩ  
-50  
-1  
nA  
µA  
VCB=-300V  
VCB=-300V, Tamb=100°C  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-60  
-110  
-170  
-100  
-165  
-240  
mV  
mV  
mV  
IC=-100mA, IB=-10mA*  
IC=-500mA, IB=-100mA*  
IC=-1A, IB=-300mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-910  
-750  
-1150 mV  
-1020 mV  
IC=-1A, IB=-300mA*  
IC=-1A, VCE=-10V*  
Base-Emitter  
Turn-On Voltage  
Static Forward  
Current Transfer Ratio  
100  
100  
90  
200  
200  
170  
10  
IC=-10mA, VCE=-10V*  
IC=-0.5A, VCE=-10V*  
IC=-1A, VCE=-10V*  
IC=-2A, VCE=-10V*  
300  
Transition Frequency  
fT  
85  
23  
MHz  
pF  
IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
VCB=-20V, f=1MHz  
ton  
toff  
108  
2500  
ns  
ns  
IC=-500mA, IB1=-50mA  
IB2=50mA, VCC=-100V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
Spice parameter data is available upon request for this device  
3 - 290  
FZT957  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
VCE(sat) v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VBE(sat) v IC  
Single Pulse Test Tamb=25C  
10  
1
0.1  
µ
0.01  
1
100  
1000  
10  
I
- Collector Current (Amps)  
VCE - Collector Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
3 - 291  
FZT958  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-400  
-400  
-400  
-6  
-600  
-600  
-550  
-8  
V
V
V
V
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
IC=-1µA, RB ≤1kΩ  
IC=-10mA*  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
IE=-100µA  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
µA  
VCB=-300V  
VCB=-300V, Tamb=100°C  
ICER  
R ≤1kΩ  
-50  
-1  
nA  
µA  
VCB=-300V  
VCB=-300V, Tamb=100°C  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-100  
-150  
-340  
-150  
-200  
-400  
mV  
mV  
mV  
IC=-10mA, IB=-1mA*  
IC=-100mA, IB=-10mA*  
IC=-500mA, IB=-100mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-830  
-725  
-950  
-840  
mV  
mV  
IC=-500mA, IB=-100mA*  
IC=-500mA, VCE=-10V*  
Base-Emitter  
Turn-On Voltage  
Static Forward  
Current Transfer Ratio  
100  
100  
10  
200  
200  
20  
IC=-10mA, VCE=-10V*  
IC=-500mA, VCE=-10V*  
IC=-1A, VCE=-10V*  
300  
Transition Frequency  
fT  
85  
19  
MHz  
pF  
IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
VCB=-20V, f=1MHz  
ton  
toff  
104  
2400  
ns  
ns  
IC=-500mA, IB1=-50mA  
IB2=50mA, VCC=-100V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
Spice parameter data is available upon request for this device  
3 - 292  
FZT958  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
VCE(sat) v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VBE(sat) v IC  
Single Pulse Test Tamb=25C  
10  
1
0.1  
µ
0.01  
1
100  
1000  
10  
I
- Collector Current (Amps)  
VCE - Collector Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
3 - 293  
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