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RZL025P01

型号:

RZL025P01

描述:

1.5V驱动P沟道MOSFET[ 1.5V Drive Pch MOSFET ]

品牌:

ROHM[ ROHM ]

页数:

6 页

PDF大小:

205 K

RZL025P01  
Transistors  
1.5V Drive Pch MOSFET  
RZL025P01  
zDimensions (Unit : mm)  
zStructure  
Silicon P-channel MOSFET  
TUMT6  
zFeatures  
1) Low on-resistance.  
2) High power package.  
3) Low voltage drive. (1.5V)  
Abbreviated symbol : YC  
zApplication  
Switching  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TR  
(6)  
(5)  
(4)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
2  
RZL025P01  
1  
(1) Drain  
(2) Drain  
(3) Gate  
(4) Source  
(5) Drain  
(6) Drain  
(1)  
(2)  
(3)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
12  
10  
Unit  
V
VDSS  
VGSS  
ID  
V
Continuous  
Pulsed  
2.5  
A
Drain current  
1  
IDP  
10  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.8  
10  
1.0  
A
1  
2  
ISP  
A
Total power dissipation  
Channel temperature  
PD  
W
°C  
°C  
Tch  
Tstg  
150  
Range of Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Rth (ch-a) ∗  
Limits  
125  
Unit  
Channel to ambient  
When mounted on a ceramic board.  
°C / W  
1/5  
RZL025P01  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
µA VGS= 10V, VDS=0V  
Unit  
Gate-source leakage  
IGSS  
10  
Drain-source breakdown voltage V(BR) DSS 12  
Zero gate voltage drain current  
V
µA  
V
ID= 1mA, VGS=0V  
IDSS  
1  
1.0  
61  
84  
121  
220  
V
DS= 12V, VGS=0V  
DS= 6V, ID= 1mA  
Gate threshold voltage  
VGS (th) 0.3  
V
3.5  
44  
60  
81  
110  
1350  
130  
125  
9
mID= 2.5A, VGS= 4.5V  
mID= 1.2A, VGS= 2.5V  
mID= 1.2A, VGS= 1.8V  
Static drain-source on-state  
resistance  
RDS (on)  
ID= 0.5A, VGS= 1.5V  
DS= 6V, ID= 2.5A  
mΩ  
S
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
Coss  
V
pF VDS= 6V  
pF GS=0V  
pF f=1MHz  
V
Crss  
td (on)  
ns  
ns  
ns  
ns  
I
V
V
R
D
= 1.2A  
DD 6V  
GS= 4.5V  
t
r
35  
130  
85  
13  
2.5  
2.0  
td (off)  
tf  
Turn-off delay time  
Fall time  
L
5Ω  
=10Ω  
R
G
Total gate charge  
Gate-source charge  
Qg  
Qgs  
Qgd  
nC VDD 6V, ID= 2.5A  
nC  
V
GS= 4.5V  
2.4, R =10Ω  
R
L
G
Gate-drain charge  
nC  
Pulsed  
zBody diode characteristics(Source-drain) (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
IS= 2.5A, VGS=0V  
Unit  
V
Forward voltage  
VSD  
1.2  
Pulsed  
2/5  
RZL025P01  
Transistors  
zElectrical characteristic curves  
10  
1
10  
10  
8
VDS= -6V  
Pulsed  
Ta=25  
Pulsed  
VGS= -10V  
VGS= -4.5V  
VGS= -4.0V  
VGS= -2.5V  
Ta=25  
Pulsed  
8
6
4
2
0
VGS= -1.8V  
VGS= -10V  
VGS= -4.5V  
VGS= -2.5V  
°C  
Ta= 125  
Ta= 75  
Ta= 25  
Ta= - 25  
VGS= -2.0V  
6
VGS= -1.6V  
4
VGS= -1.5V  
0.1  
2
VGS= -1.2V  
VGS= -1.2V  
8 10  
0.01  
0
0.0  
0.5  
1.0  
1.5  
0.0  
0.2  
DRAIN-SOURCE VOLTAGE -VDS[V]  
Fig.1 Typical Output Characteristics(  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
DRAIN-SOURCE VOLTAGE -VDS[V]  
GATE-SOURCE VOLTAGE : -VGS [V]  
Fig.2 Typical Output Characteristics(  
)
)
Fig.3 Typical Transfer Characteristics  
1000  
100  
10  
1000  
100  
10  
1000  
100  
10  
VGS= -2.5V  
Pulsed  
Ta=25  
VGS= -4.5V  
Pulsed  
Pulsed  
.
Ta=125  
VGS= -1.5V  
VGS= -1.8V  
VGS= -2.5V  
VGS= -4.5V  
Ta=125  
Ta=75  
Ta=75  
Ta=25  
Ta= -25  
Ta=25  
Ta= -25  
0.1  
1
10  
0.1  
1
10  
0.1  
1
10  
DRAIN CURRENT : -ID [A]  
DRAIN CURRENT : -ID [A]  
DRAIN CURRENT : -ID [A]  
Fig.4 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.5 Static Drain-Source On-State  
Resistance vs. Drain Current(  
)
)
)
10  
1000  
100  
10  
1000  
100  
10  
VGS= -1.8V  
Pulsed  
VGS= -1.5V  
Pulsed  
VGS=0V  
Pulsed  
Ta=125  
Ta=75  
Ta=25  
Ta=-25  
1
0.1  
Ta=125  
Ta=125  
Ta=75  
Ta=25  
Ta= -25  
Ta=75  
Ta=25  
Ta= -25  
0.01  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.1  
1
10  
0.1  
1
10  
SOURCE-DRAIN VOLTAGE : -VSD [V]  
DRAIN CURRENT : -ID [A]  
DRAIN CURRENT : -ID [A]  
Fig.7 Static Drain-Source On-State  
Fig.9 Reverse Drain Current  
vs. Sourse-Drain Voltage  
Fig.8 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Resistance vs. Drain Current(  
)
)
3/5  
RZL025P01  
Transistors  
5
4
3
2
1
0
200  
150  
100  
50  
100  
10  
1
Ta=25  
Ta=25℃  
VDS= -6V  
Pulsed  
VDD= -6V  
ID= -2.5A  
RG=10  
Pulsed  
Pulsed  
ID= -2.5A  
ID= -1.2A  
Ta= -25  
Ta=25  
Ta=75  
Ta=125  
0
0
0
0
2
4
6
8
10  
12  
14  
0.1  
1.0  
10.0  
5
10  
DRAIN CURRENT : -ID [A]  
TOTAL GATE CHARGE : Qg [nC]  
GATE-SOURCE VOLTAGE : -VGS [V]  
Fig.11 Forward Transfer Admittance  
vs. Drain Current  
Fig.12 Dynamic Input Characteristics  
Fig.10 Static Drain-Source On-State  
Resistance vs. Gate Source Voltage  
10000  
1000  
100  
1000  
100  
10  
td(off)  
tf  
Ciss  
Crss  
Coss  
Ta=25℃  
VDD= -6V  
VGS=-4.5V  
RG=10Ω  
Pulsed  
Ta=25℃  
f=1MHz  
VGS=0V  
td(on)  
tr  
1
10  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
100  
DRAIN CURRENT : -ID [A]  
DRAIN-SOURCE VOLTAGE : -VDS [V]  
Fig.13 Typical Capacitance  
vs. Drain-Source Voltage  
Fig.14 Switching Characteristics  
4/5  
RZL025P01  
Transistors  
zMeasurement circuits  
Pulse width  
I
D
V
GS  
VGS  
10%  
50%  
V
DS  
50%  
90%  
RL  
D.U.T.  
10%  
90%  
10%  
RG  
V
DD  
90%  
V
DS td(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.16 Switching Time Waveforms  
Fig.15 Switching Time Test Circuit  
V
G
V
GS  
ID  
V
DS  
Q
g
RL  
V
GS  
I
G (Const.)  
D.U.T.  
Q
gs  
Qgd  
RG  
V
DD  
Charge  
Fig.17 Gate Charge Test Circuit  
Fig.18 Gate Charge Waveform  
zNotice  
This product might cause chip aging and breakdown under the large electrified environment.  
Please consider to design ESD protection circuit.  
5/5  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level  
of reliability and the malfunction of which would directly endanger human life (such as medical  
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers  
and other safety devices), please be sure to consult with our sales representative in advance.  
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance  
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow  
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in  
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM  
cannot be held responsible for any damages arising from the use of the products under conditions out of the  
range of the specifications or due to non-compliance with the NOTES specified in this catalog.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact your nearest sales office.  
THE AMERICAS / EUROPE / ASIA / JAPAN  
ROHM Customer Support System  
Contact us : webmaster@ rohm.co.jp  
www.rohm.com  
TEL : +81-75-311-2121  
FAX : +81-75-315-0172  
Copyright © 2008 ROHM CO.,LTD.  
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan  
Appendix1-Rev2.0  
厂商 型号 描述 页数 下载

ROHM

RZL025P01TR [ Transistor ] 6 页

ROHM

RZL035P01 1.5V驱动P沟道MOSFET[ 1.5V Drive Pch MOSFET ] 5 页

ROHM

RZL035P01TR [ Small Signal Field-Effect Transistor, 3.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN ] 5 页

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