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RZL035P01

型号：

RZL035P01

描述：

1.5V驱动P沟道MOSFET[ 1.5V Drive Pch MOSFET ]

品牌：

ROHM[ ROHM ]

页数：

5 页

PDF大小：

234 K

下载PDF手册
1.5V Drive Pch MOSFET  
RZL035P01  
zStructure  
zDimensions (Unit : mm)  
Silicon P-channel MOSFET  
TUMT6  
zFeatures  
1) Low on-resistance.  
2) High power package.  
3) Low voltage drive. (1.5V)  
Abbreviated symbol : YB  
zApplication  
Switching  
zPackaging specifications  
Package  
Taping  
TR  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RZL035P01  
zAbsolute maximum ratings (Ta=25°C)  
zInner circuit  
(6)  
(5)  
(4)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
−12  
10  
Unit  
V
V
∗2  
Continuous  
Pulsed  
3.5  
A
Drain current  
∗1  
IDP  
14  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
−0.8  
−14  
1.0  
A
∗1  
∗1  
∗2  
ISP  
A
(1) Drain  
(2) Drain  
(3) Gate  
(4) Source  
(5) Drain  
(6) Drain  
Total power dissipation  
Channel temperature  
PD  
W
°C  
°C  
Tch  
Tstg  
150  
(1)  
(2)  
(3)  
Range of Storage temperature  
∗1 Pw≤10µs, Duty cycle≤1%  
∗2 Mounted on a ceramic board  
−55 to +150  
∗1 ESD PROTECTION DIODE  
∗2 BODY DIODE  
zThermal resistance  
Parameter  
Symbol  
Rth (ch-a) ∗  
Limits  
125  
Unit  
Channel to ambient  
∗ When mounted on a ceramic board.  
°C / W  
www.rohm.com  
2009.12 - Rev.A  
1/4  
c
○ 2009 ROHM Co., Ltd. All rights reserved.  
RZL035P01  
Data Sheet  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
Unit  
µA  
V
Gate-source leakage  
IGSS  
−
−
−
10  
−
V
GS= 10V, VDS=0V  
Drain-source breakdown voltage V(BR) DSS −12  
ID= −1mA, VGS=0V  
Zero gate voltage drain current  
IDSS  
−
−
−
−1  
−1.0  
36  
50  
69  
132  
−
−
−
−
−
−
−
−
−
−
−
µA VDS= −12V, VGS=0V  
DS= −6V, ID= −1mA  
mΩ ID= −3.5A, VGS= −4.5V  
mΩ ID= −1.7A, VGS= −2.5V  
mΩ ID= −1.7A, VGS= −1.8V  
Gate threshold voltage  
VGS (th) −0.3  
V
V
−
−
−
−
5.5  
26  
36  
46  
66  
−
1940  
260  
240  
10  
50  
350  
180  
20  
3.5  
3.0  
Static drain-source on-state  
resistance  
∗
∗
RDS (on)  
ID= −0.7A, VGS= −1.5V  
mΩ  
S
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
Coss  
V
DS= −6V, ID= −3.5A  
DS= −6V  
−
−
−
−
−
−
−
−
pF  
V
pF VGS=0V  
pF f=1MHz  
Crss  
td (on)  
∗
∗
∗
∗
∗
∗
∗
ns  
ns  
ns  
ns  
V
DD −6V  
I
V
R
D
= −1.7A  
t
r
GS= −4.5V  
td (off)  
tf  
Turn-off delay time  
Fall time  
L
3.5Ω  
R
G
=10Ω  
Total gate charge  
Gate-source charge  
Qg  
Qgs  
Qgd  
nC VDD −6V, ID= −3.5A  
−
−
nC  
V
GS= −4.5V  
1.7Ω, R =10Ω  
R
L
G
Gate-drain charge  
nC  
∗Pulsed  
zBody diode characteristics (Source-drain) (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
Unit  
∗
Forward voltage  
VSD  
−
−
−1.2  
V
IS= −3.5A, VGS=0V  
∗ Pulsed  
www.rohm.com  
2009.12 - Rev.A  
2/4  
c
○ 2009 ROHM Co., Ltd. All rights reserved.  
RZL035P01  
Data Sheet  
zElectrical characteristics curves  
10  
8
10  
10  
1
Ta=25°C  
VGS= -4.5V  
VGS= -2.5V  
VDS= -6V  
Pulsed  
Pulsed  
8
VGS= -4.5V  
Ta= 125°C  
VGS= -1.5V  
VGS= -2.5V  
VGS= -1.8V  
Ta= 75°C  
Ta= 25°C  
6
6
Ta= - 25°C  
0.1  
VGS= -1.8V  
VGS= -1.5V  
4
4
VGS= -1.4V  
0.01  
0.001  
VGS= -1.3V  
2
2
VGS= -1.2V  
4
Ta=25°C  
Pulsed  
0
0
0
2
6
8
10  
10  
10  
0
0.2  
DRAIN-SOURCE VOLTAGE : -VDS[V]  
Fig.1 Typical output characteristics(  
0.4  
0.6  
0.8  
1
0
0.5  
1
1.5  
DRAIN-SOURCE VOLTAGE : -VDS[V]  
GATE-SOURCE VOLTAGE : -VGS[V]  
Fig.3 Typical Transfer Characteristics  
)
Fig.2 Typical output characteristics(  
)
Ⅰ
Ⅱ
1000  
100  
10  
1000  
100  
10  
1000  
100  
10  
Ta=25°C  
Pulsed  
VGS= -4.5V  
Pulsed  
VGS= -2.5V  
Pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
VGS= -1.5V  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
VGS= -1.8V  
VGS= -2.5V  
VGS= -4.5V  
0.1  
1
0.1  
1
10  
0.1  
1
10  
DRAIN-CURRENT : -ID[A]  
DRAIN-CURRENT : -ID[A]  
DRAIN-CURRENT : -ID[A]  
Fig.4 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.5 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current(  
)
)
)
Ⅲ
Ⅰ
Ⅱ
100  
10  
1
1000  
100  
10  
1000  
100  
10  
VGS= -1.8V  
Pulsed  
VDS= -6V  
Pulsed  
VGS= -1.5V  
Pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
0.1  
1.0  
DRAIN-CURRENT : -ID[A]  
10.0  
0.1  
1
10  
0.1  
1
DRAIN-CURRENT : -ID[A]  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain Current(  
DRAIN-CURRENT : -ID[A]  
Fig.8 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.9 Forward Transfer Admittance  
vs. Drain Current  
)
Ⅳ
ꢀꢀꢀꢀ  
)
Ⅳ
www.rohm.com  
2009.12 - Rev.A  
3/4  
c
○ 2009 ROHM Co., Ltd. All rights reserved.  
RZL035P01  
Data Sheet  
250  
200  
150  
100  
50  
10000  
1000  
100  
10  
Ta=25°C VDD= -6V  
GS=-4.5V RG=10Ω  
Pulsed  
Ta=25°C  
Pulsed  
10  
VGS=0V  
V
Pulsed  
ID= -3.5A  
1
ID= -1.7A  
td(off)  
tf  
0.1  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
td(on)  
tr  
0
1
0.01  
0
0
2
4
6
8
10  
0.01  
0.1  
1
10  
0.5  
1
GATE-SOURCE VOLTAGE : -VGS[V]  
Fig.11 Static Drain-Source On-State  
DRAIN-CURRENT : -ID[A]  
SOURCE-DRAIN VOLTAGE : -VSD [V]  
Fig.10 Reverse Drain Current  
Fig.12 Switching Characteristics  
Resistance vs. Gate Source Voltage  
ꢀꢀꢀꢀꢀ  
vs. Sourse-Drain Voltage  
ꢀꢀꢀ  
10000  
1000  
100  
5
4
3
2
1
0
Ta=25°C  
f=1MHz  
Ciss  
VGS=0V  
Coss  
Ta=25°C  
DD= -6V  
D= -3.5A  
G=10Ω  
Pulsed  
V
I
Crss  
R
0.01  
0.1  
1
10  
100  
0
5
10  
15  
20  
DRAIN-SOURCE VOLTAGE : -VDS[V]  
TOTAL GATE CHARGE : Qg [nC]  
Fig.13 Dynamic Input Characteristics  
Fig.14 Typical Capacitance  
vs. Drain-Source Voltage  
zMeasurement circuits  
Pulse width  
I
D
V
V
GS  
10%  
50%  
VDS  
V
GS  
50%  
90%  
R
L
D.U.T.  
10%  
90%  
10%  
V
DD  
RG  
90%  
DS td(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-1 Switching Time Measurement Circuit  
Fig.1-2 Switching Waveforms  
VG  
I
D
VDS  
Q
g
VGS  
RL  
V
GS  
D.U.T.  
I
G (Const.)  
Q
gs  
Qgd  
VDD  
RG  
Charge  
Fig.2-1 Gate Charge Measurement Circuit  
Fig.2-2 Gate Charge Waveform  
zNotice  
This product might cause chip aging and breakdown under the large electrified environment.  
Please consider to design ESD protection circuit.  
www.rohm.com  
2009.12 - Rev.A  
4/4  
c
○ 2009 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,  
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of  
any of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2009 ROHM Co., Ltd. All rights reserved.  
R0039  
A
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