SMD Type
Transistors
FZT955;FZT956
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
Testconditons
Min
Typ
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=-100ìA
-180 -210
-180 -210
-140 -170
V
IC=-1ìA, RB 1kÙ
IC=-10mA*
V
IE=-100ìA
-6
-8
V
VCB=-150V
-50
-1
nA
ìA
nA
ìA
nA
mV
mV
mV
mV
Collector Cut-Off Current
ICBO
VCB=-150V,Tamb=100
VCB=-150V
-50
-1
ICER
Collector Cut-Off Current (R 1kÙ)
Emitter Cut-Off Current
VCB=-150V,Tamb=100
VEB=-6V
IEBO
-10
-60
-120
IC=-100mA, IB=-5mA*
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
IC=-3A, IB=-300mA*
IC=-3A, VCE=-5V*
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-10A, VCE=-5V*
IC=-100mA, VCE=-10V,f=50MHz
VCB=-20V, f=1MHz
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
-30
-70
Collector-Emitter Saturation Voltage
VCE(sat)
-110 -150
-275 -370
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
-970 -1110 mV
-830 -950
200
mV
100
100
75
200
140
10
300
Static Forward Current Transfer Ratio
hFE
Transition Frequency
Output Capacitance
fT
Cobo
ton
110
40
MHz
pF
68
ns
Switching Times
toff
1030
ns
*Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
2
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