SMD Type
Transistors
FZT1053A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
150
75
Typ
250
100
8.8
0.9
1.5
0.3
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter Cut-Off Current
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
V
7.5
V
ICBO
ICES
IEBO
VCB=120V
VCE=120V
VEB=4V
10
10
10
nA
nA
nA
21
55
30
75
IC=0.2A, IB=20mA
IC=0.5A, IB=20mA
IC=1A, IB=10mA
Collector-emitter saturation voltage *
VCE(sat)
150
160
350
200
210
440
mV
IC=2A, IB=100mA
IC=4.5A, IB=200mA
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=3A, IB=100mA
VBE(on) IC=3A, VCE=2V
IC=10mA, VCE=2V*
900 1000 mV
825
440
950
mV
270
300
300
40
IC=0.5A, VCE=2V*
450 1200
Static Forward Current Transfer Ratio
hFE
IC=1A, VCE=2V*
450
60
IC=4.5A, VCE=2V*
IC=10A, VCE=2V*
IC=50mA, VCE=10V f=100MHz
VCB=10V, f=1MHz
IC=2A, VCC=50V
20
Transitional frequency
Output capacitance
Turn-on time
fT
140
MHz
pF
Cobo
t(on)
t(off)
21
30
162
900
ns
Turn-off time
IB1=IB2=20mA
ns
* Pulse test: tp = 300 ìs; d
0.02.
2
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