IXTH 11P50
IXTT 11P50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = -10 V; ID = ID25, pulse test
5
9
S
1
2
3
Ciss
Coss
Crss
4700
430
pF
pF
pF
VGS = 0 V, VDS = -25 V, f = 1 MHz
135
td(on)
tr
td(off)
tf
33
27
35
35
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 4.7 Ω (External)
Dim.
Millimeter
Min.
Inches
Max.
Min. Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
QG(on)
QGS
130
46
nC
nC
nC
A
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b
QGD
92
b12
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
RthJC
RthCS
0.42 K/W
K/W
20.80 21.46
15.75 16.26
(TO-247)
0.25
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
L
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
6.15 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-268 Outline
Symbol
IS
TestConditions
VGS = 0
10P50
11P50
-10
-11
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM 10P50
11P50
-40
-44
A
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
-3
V
IF = IS, di/dt = 100 A/µs
500
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
oneormoreofthefollowingU.S.patents:
