IXTA02N250HV
Symbol
Test Conditions
Characteristic Values
TO-263AB (VHV) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 100V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
88
145
mS
Ciss
Coss
Crss
116
8
pF
pF
pF
3
td(on)
tr
td(off)
tf
19
19
32
33
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 100Ω (External)
PIN: 1 - Gate
2 - Source
3 - Drain
Qg(on)
Qgs
7.4
0.7
5.3
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
1.5 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
200 mA
800 mA
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = 100mA, VGS = 0V, Note 1
2.0
V
IF = 200mA, -di/dt = 50A/μs, VR = 100V
1.5
μs
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
