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KZT2222A

型号:

KZT2222A

描述:

NPN开关晶体管[ NPN Switching Transistor ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

4 页

PDF大小:

138 K

SMD Type  
Transistors  
NPN Switching Transistor  
KZT2222A  
SOT-223  
Unit: mm  
Features  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
High current (max. 600 mA)  
Low voltage (max.40 V).  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
0.70  
-0.1  
3 Emitter  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
75  
V
V
Collector-emitter voltage  
40  
Emitter-base voltage  
6
600  
V
Collector current  
mA  
mA  
mA  
W
Peak collector current  
ICM  
800  
Peak base current  
IBM  
200  
Ptot  
1
Total power dissipation Ta 25  
Storage temperature  
Tstg  
-65 to +150  
150  
Junction temperature  
Tj  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Thermal resistance from junction to soldering point  
Tamb  
Rth(j-a)  
Rth(j-s)  
-65 to +150  
109  
K/W  
K/W  
28  
1
www.kexin.com.cn  
SMD Type  
Transistors  
KZT2222A  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
10  
Unit  
nA  
A
IE = 0; VCB = 60 V  
Collector cutoff current  
Emitter cutoff current  
ICBO  
IEBO  
10  
IE = 0; VCB = 60 V; Tj = 125  
IC = 0; VEB = 5 V  
10  
nA  
IC = 0.1 mA; VCE = 10 V  
IC = 1 mA; VCE = 10 V  
IC = 10 mA; VCE = 10 V  
IC = 10 mA; VCE = 10 V;Ta = -55  
IC = 150 mA; VCE = 1 V *  
IC = 150 mA; VCE = 10 V *  
IC = 500 mA; VCE = 10 V *  
35  
50  
75  
35  
DC current gain  
hFE  
50  
100  
40  
300  
300  
1
mV  
V
IC = 150 mA; IB = 15 mA  
IC = 500 mA; IB = 50 mA  
IC = 150 mA; IB = 15 mA  
IC = 500 mA; IB = 50 mA  
IE = iE = 0; VCB = 10 V; f = 1 MHz  
collector-emitter saturation voltage  
base-emitter saturation voltage  
VCEsat  
VBEsat  
0.6  
1.2  
2
V
V
Collector capacitance  
Emitter capacitance  
Cc  
Ce  
8
pF  
pF  
25  
IC = iC = 0; VEB = 500 mV; f = 1 MHz  
ICon = 150 mA; IBon = 15 mA;  
IBoff = -15 mA  
Turn-on time  
Delay time  
Rise time  
ton  
td  
35  
10  
ns  
ns  
ns  
ns  
ns  
tr  
25  
Turn-off time  
Storage time  
toff  
ts  
250  
200  
60  
Fall time  
tf  
ns  
Transition frequency  
fT  
300  
MHz  
IC = 20 mA; VCE = 20 V; f = 100 MHz  
* Pulse test: tp  
300 ìs; ä  
0.02.  
2
www.kexin.com.cn  
SMD Type  
Transistors  
TYPICAL CHARACTERISTICS  
DC Current Gain  
vs. Collector Current  
Collector-Emitter Saturation Voltage  
vs. Collector Current  
500  
0.4  
0.3  
0.2  
0.1  
VCE =5V  
β=10  
400  
300  
125℃  
25℃  
125℃  
25℃  
200  
100  
0
-40℃  
-40℃  
500  
100  
0.1 0.3  
3
10 30  
1
100 300  
1
10  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
Base-Emitter Saturation Voltage  
vs. Collector Current  
Base-Emitter On Voltage  
vs. Collector Current  
1
0.8  
0.6  
β=10  
VCE =5V  
1
-40℃  
25℃  
-40℃  
0.8  
0.6  
25℃  
125℃  
125℃  
0.4  
0.2  
0.4  
1
500  
10  
100  
25  
0.1  
1
10  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
Emitter Transition and Output  
Capacitance vs. Reverse Bias Voltage  
Collector-Cutoff Current  
vs. Ambient Temperature  
500  
20  
f=1MHz  
)
100  
10  
A
n
(
VCB=40V  
O
16  
12  
B
C
I
,
t
n
Cte  
e
r
r
u
1
C
r
Cob  
8
4
o
t
c
e
0.1  
l
l
o
C
25  
50  
75  
100 125 150  
0.1  
1
10  
100  
Ambient Temperature, TA()  
Reverse Bias Voltage(V)  
3
www.kexin.com.cn  
SMD Type  
Transistors  
TYPICAL CHARACTERISTICS  
Switching Times  
vs. Collector Current  
Turn On and Turn Off Times  
vs. Collector Current  
IC  
400  
400  
320  
240  
160  
IC  
10  
IB1=IB2=  
IB1=IB2=  
10  
320  
240  
VCC=25V  
VCC=25V  
tS  
160  
tR  
tF  
80  
0
tOFF  
80  
0
tD  
tON  
10  
100  
Collector Current, IC (mA)  
1000  
10  
100  
1000  
Collector Current, IC (mA)  
Power Dissipation vs.  
Ambient Temperature  
1
0.75  
0.5  
0.25  
0
75 100 125 150  
25 50  
Temperature ()  
0
4
www.kexin.com.cn  
厂商 型号 描述 页数 下载

KEXIN

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TYSEMI

KZT122CZT122 高电流(最大5A)。[ High current (max. 5A). ] 1 页

KEXIN

KZT127 表面贴装PNP硅功率达林顿晶体管[ Surface Mount PNP Silicon Power Darlington Transistor ] 1 页

TYSEMI

KZT127CZT127 高电流(最大5A)。[ High current (max. 5A). ] 1 页

TYSEMI

KZT2222A 大电流(最大600 mA)的[ High current (max. 600 mA) ] 4 页

KEXIN

KZT2955 2.0W表面贴装互补PNP硅功率晶体管[ 2.0W Surface Mount Complementary PNP Silicon Power Transistor ] 1 页

TYSEMI

KZT2955CZT2955 高电流(最大6A)。[ High current (max. 6A). ] 1 页

KEXIN

KZT3055 2.0W表面贴装互补NPN硅功率晶体管[ 2.0W Surface Mount Complementary NPN Silicon Power Transistor ] 1 页

TYSEMI

KZT3055CZT3055 高电流(最大6A)。[ High current (max. 6A). ] 1 页

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