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KZT122

型号:

KZT122

描述:

表面贴装NPN硅功率达林顿晶体管[ Surface Mount NPN Silicon Power Darlington Transistor ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

1 页

PDF大小:

38 K

SMD Type  
Transistors  
Surface Mount NPN Silicon Power Darlington Transistor  
KZT122 (CZT122)  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
High current (max. 5A).  
Low voltage (max. 100V).  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
1 Base  
2 Collector  
3 Emitter  
4 Collector  
1
2
3
+0.1  
0.70  
-0.1  
2.9  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
100  
Collector-emitter voltage  
Emitter-base voltage  
100  
V
5
V
5
A
Collector current  
ICP  
8
120  
A
Base current  
IB  
mA  
W
/W  
power dissipation  
PD  
2
Thermal Resistance.Junction-to-Ambient  
Junction temperature  
Storage temperature  
R
JA  
Tj  
Tstg  
62.5  
150  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector to emitter breakdown voltage  
Collctor cutoff current  
Symbol  
Testconditons  
Min  
Typ  
Max  
Unit  
VCEO  
ICEO  
ICBO  
IEBO  
IC=30mA  
100  
V
VCE=50V  
500  
200  
2.0  
A
Collector cutoff current  
VCB = 100 V  
VEB = 5.0 V  
A
Emitter cutoff current  
mA  
IC = 500 mA; VCE =3.0 V  
IC = 3A; VCE = 3.0V  
1000  
1000  
DC current gain  
hFE  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Output capacitance  
VCE(sat)  
IC = 3.0A; IB = 12mA  
2.0  
4.0  
200  
V
V
VBE(sat) IC = 5.0A; IB = 20mA  
Cob  
fT  
VCB = 10 V, IE = 0,f=1.0MHz  
IC= 3A; VCE =4V; f = 1.0 MHz  
pF  
Transition frequency  
4.0  
MHz  
1
www.kexin.com.cn  
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