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HYMD564M646CP6-H

型号:

HYMD564M646CP6-H

描述:

200PIN DDR SDRAM的基础上512Mb的ç版本SO- DIMM内存模块。 ( TSOP )[ 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP) ]

品牌:

HYNIX[ HYNIX SEMICONDUCTOR ]

页数:

20 页

PDF大小:

213 K

200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)  
This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR  
SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered  
SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is  
suitable for easy interchange and addition.  
FEATURES  
JEDEC Standard 200-pin small outline, dual in-line  
memory module (SO-DIMM)  
Programmable Burst Length 2 / 4 / 8 with both  
sequential and interleave mode  
Two ranks 64M x 64 organization  
Edge-aligned DQS with data outs and Center-aligned  
DQS with data inputs  
2.6V ± 0.1V VDD and VDDQ Power supply for  
DDR400, 2.5V ± 0.2V for DDR333 and below  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
All inputs and outputs are compatible with SSTL_2  
interface  
Serial Presence Detect (SPD) with EEPROM  
Fully differential clock operations (CK & /CK) with  
133/166/200MHz  
Built with 512Mb DDR SDRAMs in 400 mil TSOP II  
packages  
DLL aligns DQ and DQS transition with CK transition  
All lead-free products (RoHS compliant)  
Programmable CAS Latency: DDR266(2, 2.5 clock),  
DDR333(2.5 clock), DDR400(3 clock)  
ADDRESS TABLE  
# of  
DRAMs  
Refresh  
# of row/bank/column Address  
Method  
Organization  
Ranks  
SDRAMs  
256MB  
512MB  
32M x 64  
64M x 64  
1
2
32Mb x 16  
32Mb x 16  
4
8
13(A0~A12)/2(BA0,BA1)/10(A0~A9)  
13(A0~A12)/2(BA0,BA1)/10(A0~A9)  
8K / 64ms  
8K / 64ms  
PERFORMANCE  
-D431  
Part-Number Suffix  
Speed Bin  
-J  
DDR333  
2.5-3-3  
-
-H  
DDR266B  
2.5-3-3  
-
Unit  
-
DDR400B  
3-3-3  
200  
CL - tRCD- tRP  
CK  
CL=3  
MHz  
MHz  
MHz  
Max Clock  
Frequency  
CL=2.5  
CL=2  
166  
166  
133  
133  
133  
133  
Note:  
1. 2.6V ± 0.1V VDD and VDDQ Power supply for DDR400 and 2.5V ± 0.2V for DDR333 and below  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 1.3 / Feb. 2006  
1
11  
200pin DDR SDRAM SO-DIMMs  
ORDERING INFORMATION  
# of  
DRAMs  
ECC  
Support  
Part Number  
Density Organization  
Material  
DIMM Dimension  
Lead-free1  
67.60 x 31.75 x 3.8 [mm3]  
HYMD532M646C[L]P6-D43/J/H 256MB  
HYMD564M646C[L]P6-D43/J/H 512MB  
32Mb x 16  
32Mb x 16  
4
8
None  
None  
Note:  
1. The “Lead-free” products contain Lead less than 0.1% by weight and satisfy RoHS - please contact Hynix for product availability.  
* These products are built with HY5DU124(8,16)22C[L]TP, the Hynix DDR SDRAM component.  
Rev. 1.3 / Feb. 2006  
2
11  
200pin DDR SDRAM SO-DIMMs  
PIN DESCRIPTION  
Pin  
Pin Description  
Differential Clock Inputs  
Chip Select Input  
Clock Enable Input  
Commend Sets Inputs  
Address  
Pin  
Pin Description  
DQs Power Supply  
Ground  
Reference Power Supply  
Power Supply for SPD  
E2PROM Address Inputs  
E2PROM Clock  
CK0, /CK0  
VDDQ  
VSS  
VREF  
/CS0, /CS1  
CKE0, CKE1  
/RAS, /CAS, /WE  
A0 ~ A12  
VDDSPD  
SA0~SA2  
SCL  
BA0, BA1  
Bank Address  
E2PROM Data I/O  
Write Protect Flag  
VDD Identification Flag  
Do not Use  
DQ0~DQ63  
CB0~CB7  
DQS0~DQS17  
DM0~7  
Data Inputs/Outputs  
Data Strobe Inputs/Outputs  
Data Strobe Inputs/Outputs  
Data-in Mask  
SDA  
WP  
VDDID  
DU  
VDD  
/RESET  
Power Supply  
Reset Enable  
NC  
FETEN  
No Connection  
FET Enable  
PIN ASSIGNMENT  
Pin  
1
2
3
4
5
6
7
8
Name  
VREF  
DQ0  
VSS  
DQ1  
DQS0  
DQ2  
VDD  
DQ3  
NC  
Pin  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
Name  
A5  
DQ24  
VSS  
DQ25  
DQS3  
A4  
VDD  
DQ26  
DQ27  
A2  
Pin  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
Name  
VDDQ  
/WE  
DQ41  
/CAS  
VSS  
DQS5  
DQ42  
DQ43  
VDD  
/CS2*  
DQ48  
DQ49  
VSS  
Pin  
93  
94  
95  
96  
97  
98  
99  
100  
101  
102  
103  
104  
105  
106  
Name  
Pin  
124  
125  
126  
127  
128  
Name  
VSS  
A6  
DQ28  
DQ29  
VDDQ  
Pin  
154  
155  
156  
157  
158  
Name  
/RAS  
DQ45  
VDDQ  
/CS0  
VSS  
DQ4  
DQ5  
VDDQ  
DM0,DQS9  
DQ6  
/CS1  
DM5,DQS14  
VSS  
129 DM3,DQS12 159  
DQ7  
VSS  
NC  
NC  
130  
131  
132  
133  
134  
135  
136  
137  
A3  
DQ30  
VSS  
DQ31  
CB4*  
CB5*  
VDDQ  
CK0  
160  
161  
162  
163  
164  
165  
166  
167  
168  
169  
DQ46  
DQ47  
NC  
VDDQ  
DQ52  
DQ53  
A132, NC  
VDD  
DM6  
DQ54  
DQ55  
VDDQ  
NC  
DQ60  
DQ61  
VSS  
DM7,DQS16  
DQ62  
DQ63  
VDDQ  
SA0  
SA1  
SA2  
VDDSPD  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
/RESET  
VSS  
DQ8  
VSS  
A1  
NC  
VDDQ  
DQ12  
DQ13  
DQ9  
CB0*  
CB1*  
VDD  
DQS8  
A0  
CB2*  
VSS  
CB3*  
BA1  
DQS1  
VDDQ  
CK1*  
/CK1*  
VSS  
DQ10  
DQ11  
CKE0  
VDDQ  
DQ16  
DQ17  
DQS2  
VSS  
CK2*  
/CK2*  
VDDQ  
DQS6  
DQ50  
DQ51  
VSS  
VDDID  
DQ56  
DQ57  
VDD  
DQS7  
DQ58  
DQ59  
VSS  
NU  
SDA  
107 DM1,DQS10 138  
/CK0  
VSS  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
VDD  
DQ14  
DQ15  
CKE1  
VDDQ  
BA2*  
DQ20  
A12  
139  
140 DM8,DQS17 170  
141  
142  
143  
144  
A10  
CB6*  
VDDQ  
CB7*  
171  
172  
173  
174  
175  
176  
177  
178  
179  
Key  
key  
53  
54  
55  
56  
57  
58  
59  
60  
61  
DQ32  
VDDQ  
DQ33  
DQS4  
DQ34  
VSS  
BA0  
DQ35  
DQ40  
145  
146  
147  
148  
VSS  
DQ36  
DQ37  
VDD  
VSS  
DQ21  
A11  
A9  
DQ18  
A7  
VDDQ  
DQ19  
119 DM2,DQS11 149 DM4,DQS13 180  
120  
121  
122  
123  
VDD  
DQ22  
A8  
150  
151  
152  
153  
DQ38  
DQ39  
VSS  
181  
182  
183  
184  
SCL  
DQ23  
DQ44  
Note:  
1. * : These pins are not used in this module.  
2. Pin 167 is NC for 256MB, 512MB, and 1GB, or A13 for 2GB module.  
Rev. 1.3 / Feb. 2006  
3
11  
200pin DDR SDRAM SO-DIMMs  
FUNCTIONAL BLOCK DIAGRAM  
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD532M646C[L]P6  
/S0  
/S  
/S  
LDQS  
LDM  
LDQS  
LDM  
DQS0  
DM0  
DQS4  
DM4  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ00  
DQ32  
DQ01  
DQ02  
DQ03  
DQ04  
DQ05  
DQ06  
DQ07  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
D0  
D2  
UDQS  
UDM  
UDQS  
UDM  
DQS1  
DM1  
DQ08  
DQS5  
DM5  
DQ40  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ09  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
/S  
/S  
LDQS  
LDM  
LDQS  
LDM  
DQS2  
DM2  
DQ16  
DQS6  
DM6  
DQ48  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
D1  
D3  
UDQS  
UDM  
UDQS  
UDM  
DQS3  
DM3  
DQ24  
DQS7  
DM7  
DQ56  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
# Unless otherwise noted, resistor values are 22O +- 5%  
BA0-BA1  
A0-AN  
/RAS  
SDRAMs D0-D3  
SDRAMs D0-D3  
SDRAMs D0-D3  
SDRAMs D0-D3  
SDRAMs D0-D3  
SDRAMs D0-D3  
N.C.  
Serial Presence Detector  
(SPD)  
CK0  
/CK0  
2 loads  
SCL  
SA0  
SA1  
SA2  
CK1  
/CK1  
2 loads  
0 loads  
A0  
A1  
/CAS  
SDA  
/WE  
CK2  
/CK2  
A2  
CKE0  
CKE1  
WP  
VDD SPD  
VREF  
SPD  
Notes :  
DQ wiring may differ from that described in this  
drawing : however DQ/DM/DQS relationship are  
maintained as shown.  
VDDID strap connections:  
(for memory device VDD, VDDQ)  
Strap out (open) : VDD = VDDQ  
SDRAMS DO-D7  
SDRAMS DO-D7  
VDD and VDDQ  
VDD  
VSS  
SDRAMS DO-D7,SPD  
Strap:see Note 4  
VDDID  
Strap in (closed) : VDD VDDQ  
Rev. 1.3 / Feb. 2006  
4
11  
200pin DDR SDRAM SO-DIMMs  
FUNCTIONAL BLOCK DIAGRAM  
512MB, 64M x 64 Unbuffered SO-DIMM: HYMD564M646C[L]P6  
/CS1  
/CS0  
/CS  
/CS  
/CS  
/CS  
LDQS  
LDM  
LDQS  
LDM  
LDQS  
LDM  
LDQS  
LDM  
DQS0  
DM0  
DQS4  
DM4  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ00  
DQ32  
DQ01  
DQ02  
DQ03  
DQ04  
DQ05  
DQ06  
DQ07  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
D0  
D4  
D2  
D6  
UDQS  
UDM  
UDQS  
UDM  
UDQS  
UDM  
UDQS  
UDM  
DQS1  
DM1  
DQ08  
DQS5  
DM5  
DQ40  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ09  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
/CS  
/CS  
/CS  
/CS  
LDQS  
LDM  
LDQS  
LDM  
LDQS  
LDM  
LDQS  
LDM  
DQS2  
DM2  
DQ16  
DQS6  
DM6  
DQ48  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
D1  
D5  
D3  
D7  
UDQS  
UDM  
UDQS  
UDM  
UDQS  
UDM  
UDQS  
UDM  
DQS3  
DM3  
DQ24  
DQS7  
DM7  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
I/O0  
I/O1  
I/O2  
DQ56  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ57  
DQ58  
DQ59  
DQ60  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O3  
I/O4  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
I/O5  
I/O6  
I/O7  
DQ61  
DQ62  
DQ63  
# Unless otherwise noted, resistor values are 22O +- 5%  
BA0-BA1  
A0-AN  
/RAS  
SDRAMs D0-D7  
SDRAMs D0-D7  
SDRAMs D0-D7  
SDRAMs D0-D7  
SDRAMs D0-D7  
SDRAMs D0-D3  
SDRAMs D4-D7  
Serial Presence Detector  
(SPD)  
CK0  
/CK0  
4 loads  
SCL  
SA0  
SA1  
SA2  
CK1  
/CK1  
4 loads  
0 loads  
A0  
A1  
/CAS  
SDA  
/WE  
CK2  
/CK2  
A2  
CKE0  
CKE1  
WP  
VDD SPD  
VREF  
SPD  
Notes :  
DQ wiring may differ from that described in this  
drawing : however DQ/DM/DQS relationship are  
maintained as shown.  
SDRAMS DO-D7  
SDRAMS DO-D7  
VDD and VDDQ  
VDD  
VDDID strap connections:  
VSS  
SDRAMS DO-D7,SPD  
Strap:see Note 4  
(for memory device VDD, VDDQ)  
Strap out (open) : VDD = VDDQ  
Strap in (closed) : VDD VDDQ  
VDDID  
Rev. 1.3 / Feb. 2006  
5
11  
200pin DDR SDRAM SO-DIMMs  
1
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Rating  
Unit  
oC  
Operating Temperature (Ambient)  
TA  
0 ~ 70  
oC  
V
Storage Temperature  
TSTG  
VDD  
-55 ~ 150  
-1.0 ~ 3.6  
-1.0 ~ 3.6  
-1.0 ~ 3.6  
-0.5 ~3.6  
50  
Voltage on VDD relative to VSS  
Voltage on VDDQ relative to VSS  
Voltage on inputs relative to Vss  
Voltage on I/O pins relative to Vss  
Output Short Circuit Current  
Soldering Temperature Time  
VDDQ  
VINPUT  
VIO  
V
V
V
IOS  
mA  
oC Sec  
TSOLDER  
260 10  
Note:  
1. Operation at above absolute maximum rating can adversely affect device reliability  
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)  
Parameter  
Power Supply Voltage (DDR 200, 266, 333)  
Power Supply Voltage (DDR 400)  
Power Supply Voltage (DDR 200, 266, 333)  
Power Supply Voltage (DDR 400)  
Input High Voltage  
Symbol  
VDD  
Min  
2.3  
Typ.  
2.5  
2.6  
2.5  
2.6  
-
Max  
2.7  
Unit  
V
Note  
VDD  
2.5  
2.7  
V
2
1
VDDQ  
VDDQ  
VIH  
2.3  
2.7  
V
2.5  
2.7  
V
1,2  
VREF + 0.15  
-0.3  
VDDQ + 0.3  
VREF - 0.15  
VREF + 0.04  
0.51*VDDQ  
VDDQ+0.3  
VDDQ+0.6  
1.4  
V
Input Low Voltage  
VIL  
-
V
3
4
Termination Voltage  
VTT  
VREF - 0.04  
VREF  
V
Reference Voltage  
VREF  
VIN(DC)  
VID(DC)  
VI(RATIO)  
ILI  
0.49*VDDQ 0.5*VDDQ  
V
Input Voltage Level, CK and CK inputs  
Input Differential Voltage, CK and CK inputs  
V-I Matching: Pullup to Pulldown Current Ratio  
Input Leakage Current  
-0.3  
0.36  
0.71  
-2  
-
-
-
-
-
V
V
5
6
7
8
-
2
uA  
uA  
Output Leakage Current  
ILO  
-5  
5
Normal Strength  
Output Driver  
Output High Current  
(min VDDQ, min VREF, min VTT)  
IOH  
IOL  
IOH  
IOL  
-16.8  
16.8  
-13.6  
13.6  
-
-
-
-
-
-
-
-
mA  
mA  
mA  
mA  
(VOUT=VTT±0.84)  
Output Low Current  
(min VDDQ, max VREF, max VTT)  
Half Strength Out- Output High Current  
put Driver  
(VOUT=VTT ± 0.68)  
(min VDDQ, min VREF, min VTT)  
Output Low Current  
(min VDDQ, max VREF, max VTT)  
Note:  
1. VDDQ must not exceed the level of VDD.  
2. For DDR400, VDD=2.6V ± 0.1V, VDDQ=2.6V ± 0.1V  
3. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.  
4. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same. Peak to  
peak noise on VREF may not exceed ± 2% of the DC value.  
5. VID is the magnitude of the difference between the input level on CK and the input level on /CK.  
6. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-  
ture and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum differ-  
ence between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum  
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.  
7. VIN=0 to VDD, All other pins are not tested under VIN =0V.  
8. DQs are disabled, VOUT=0 to VDDQ.  
Rev. 1.3 / Feb. 2006  
6
11  
200pin DDR SDRAM SO-DIMMs  
IDD SPECIFICATION AND CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)  
256MB, 32M x 64 Unbuffered DIMM: HYMD532M646C[L]P6  
Speed  
Symbol  
Test Condition  
Unit  
Note  
DDR400B  
DDR333  
DDR266B  
One bank; Active - Precharge; tRC=tRC(min);  
tCK=tCK(min); DQ,DM and DQS inputs changing  
twice per clock cycle; address and control inputs  
changing once per clock cycle  
IDD0  
520  
480  
400  
mA  
One bank; Active - Read - Precharge; Burst  
Length=2; tRC=tRC(min); tCK=tCK(min); address  
and control inputs changing once per clock cycle  
IDD1  
IDD2P  
IDD2F  
IDD3P  
680  
600  
40  
480  
mA  
mA  
mA  
mA  
All banks idle; Power down mode; CKE=Low,  
tCK=tCK(min)  
/CS=High, All banks idle; tCK=tCK(min); CKE=  
High; address and control inputs changing once  
per clock cycle. VIN=VREF for DQ, DQS and DM  
140  
180  
One bank active ; Power down mode; CKE=Low,  
tCK=tCK(min)  
/CS=HIGH; CKE=HIGH; One bank; Active-Pre-  
charge; tRC=tRAS(max); tCK=tCK(min); DQ, DM  
and DQS inputs changing twice per clock cycle;  
Address and other control inputs changing once  
per clock cycle  
IDD3N  
240  
mA  
Burst=2; Reads; Continuous burst; One bank  
active; Address and control inputs changing once  
per clock cycle; tCK=tCK(min); IOUT=0mA  
IDD4R  
IDD4W  
IDD5  
840  
920  
760  
840  
960  
680  
720  
880  
mA  
mA  
mA  
Burst=2; Writes; Continuous burst; One bank  
active; Address and control inputs changing once  
per clock cycle; tCK=tCK(min); DQ, DM and DQS  
inputs changing twice per clock cycle  
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,  
10*tCK for DDR266A & DDR266B at 133Mhz; dis-  
tributed refresh  
1040  
CKE=<0.2V; External clock on; tCK Normal  
20  
12  
mA  
mA  
IDD6  
IDD7  
=tCK(min)  
Low Power  
Four bank interleaving with BL=4 Refer to the fol-  
lowing page for detailed test condition  
1440  
1400  
1360  
mA  
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.  
Rev. 1.3 / Feb. 2006  
7
11  
200pin DDR SDRAM SO-DIMMs  
IDD SPECIFICATION AND CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)  
512MB, 64M x 64 Unbuffered DIMM: HYMD564M646C[L]P6  
Speed  
Symbol  
Test Condition  
Unit  
Note  
DDR400B  
DDR333  
DDR266B  
One bank; Active - Precharge; tRC=tRC(min);  
tCK=tCK(min); DQ,DM and DQS inputs changing  
twice per clock cycle; address and control inputs  
changing once per clock cycle  
IDD0  
760  
720  
640  
mA  
One bank; Active - Read - Precharge; Burst  
Length=2; tRC=tRC(min); tCK=tCK(min); address  
and control inputs changing once per clock cycle  
IDD1  
IDD2P  
IDD2F  
IDD3P  
920  
840  
80  
720  
mA  
mA  
mA  
mA  
All banks idle; Power down mode; CKE=Low,  
tCK=tCK(min)  
/CS=High, All banks idle; tCK=tCK(min); CKE=  
High; address and control inputs changing once  
per clock cycle. VIN=VREF for DQ, DQS and DM  
280  
360  
One bank active ; Power down mode; CKE=Low,  
tCK=tCK(min)  
/CS=HIGH; CKE=HIGH; One bank; Active-Pre-  
charge; tRC=tRAS(max); tCK=tCK(min); DQ, DM  
and DQS inputs changing twice per clock cycle;  
Address and other control inputs changing once  
per clock cycle  
IDD3N  
480  
mA  
Burst=2; Reads; Continuous burst; One bank  
active; Address and control inputs changing once  
per clock cycle; tCK=tCK(min); IOUT=0mA  
IDD4R  
IDD4W  
IDD5  
1080  
1160  
1280  
1000  
1080  
1200  
920  
960  
mA  
mA  
mA  
Burst=2; Writes; Continuous burst; One bank  
active; Address and control inputs changing once  
per clock cycle; tCK=tCK(min); DQ, DM and DQS  
inputs changing twice per clock cycle  
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,  
10*tCK for DDR266A & DDR266B at 133Mhz; dis-  
tributed refresh  
1120  
CKE=<0.2V; External clock on; tCK Normal  
40  
24  
mA  
mA  
IDD6  
IDD7  
=tCK(min)  
Low Power  
Four bank interleaving with BL=4 Refer to the fol-  
lowing page for detailed test condition  
1680  
1640  
1600  
mA  
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.  
Rev. 1.3 / Feb. 2006  
8
11  
200pin DDR SDRAM SO-DIMMs  
AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)  
Parameter  
Symbol  
VIH(AC)  
VIL(AC)  
VID(AC)  
VIX(AC)  
Min  
Max  
-
Unit  
V
Note  
Input High (Logic 1) Voltage, DQ, DQS and DM signals  
Input Low (Logic 0) Voltage, DQ, DQS and DM signals  
Input Differential Voltage, CK and /CK inputs  
Input Crossing Point Voltage, CK and /CK inputs  
VREF + 0.31  
-
VREF - 0.31  
VDDQ + 0.6  
0.5*VDDQ+0.2  
V
0.7  
V
1
2
0.5*VDDQ-0.2  
V
Note:  
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.  
2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.  
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)  
Parameter  
Value  
Unit  
V
Reference Voltage  
VDDQ x 0.5  
Termination Voltage  
VDDQ x 0.5  
V
AC Input High Level Voltage (VIH, min)  
AC Input Low Level Voltage (VIL, max)  
Input Timing Measurement Reference Level Voltage  
Output Timing Measurement Reference Level Voltage  
Input Signal maximum peak swing  
VREF + 0.31  
V
VREF - 0.31  
V
VREF  
VTT  
1.5  
1
V
V
V
Input minimum Signal Slew Rate  
V/ns  
Termination Resistor (RT)  
50  
Series Resistor (RS)  
25  
Output Load Capacitance for Access Time Measurement (CL)  
30  
pF  
OUTPUT LOAD CIRCUIT  
VTT  
RT=50  
Output  
Zo=50  
VREF  
CL=30pF  
Rev. 1.3 / Feb. 2006  
9
11  
200pin DDR SDRAM SO-DIMMs  
CAPACITANCE (TA=25oC, f=100MHz)  
256MB: HYMD564M646C[L]P6  
Input/Output Pins  
Symbol  
Min  
Max  
Unit  
A0 ~ A12, BA0, BA1  
/RAS, /CAS, /WE  
CIN1  
CIN2  
CIN3  
CIN4  
CIN5  
CIN6  
CIO1  
28  
28  
28  
28  
16  
7
40  
40  
40  
40  
25  
12  
12  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
CKE0, CKE1  
/CS0, /CS1  
CK0, /CK0, CK1, /CK1, CK2, /CK2  
DM0 ~ DM7  
DQ0 ~ DQ63, DQS0 ~ DQS7  
7
512MB: HYMD564M646C[L]P6  
Input/Output Pins  
Symbol  
Min  
Max  
Unit  
A0 ~ A12, BA0, BA1  
/RAS, /CAS, /WE  
CIN1  
CIN2  
CIN3  
CIN4  
CIN5  
CIN6  
CIO1  
36  
36  
28  
28  
18  
12  
12  
48  
48  
40  
40  
27  
18  
18  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
CKE0, CKE1  
/CS0, /CS1  
CK0, /CK0, CK1, /CK1, CK2, /CK2  
DM0 ~ DM7  
DQ0 ~ DQ63, DQS0 ~ DQS7  
Rev. 1.3 / Feb. 2006  
10  
11  
200pin DDR SDRAM SO-DIMMs  
AC CHARACTERISTICS (note: 1 - 9 / AC operating conditions unless otherwise noted)  
DDR400B  
DDR333  
DDR266A  
DDR266B  
DDR200  
Min Max  
Parameter  
Symbol  
UNIT  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Row Cycle Time  
tRC  
55  
-
-
60  
-
-
65  
-
65  
-
70  
80  
50  
-
ns  
ns  
ns  
ns  
Auto Refresh Row  
Cycle Time  
tRFC  
tRAS  
tRAP  
70  
40  
72  
42  
75  
45  
-
120K  
-
75  
45  
-
120K  
-
-
120K  
-
Row Active Time  
70K  
-
70K  
-
Active to Read with  
tRCD or  
tRASmin  
tRCD or  
tRASmin  
tRCD or  
tRASmin  
tRCD or  
tRASmin  
tRCD or  
tRASmin  
Auto Precharge Delay  
Row Address to  
Column Address Delay  
tRCD  
tRRD  
tCCD  
15  
10  
1
-
-
-
18  
12  
1
-
-
-
20  
15  
1
-
-
-
20  
15  
1
-
-
-
20  
15  
1
-
-
-
ns  
ns  
Row Active to Row  
Active Delay  
Column Address to  
Column Address Delay  
tCK  
Row Precharge Time  
Write Recovery Time  
tRP  
15  
15  
-
-
18  
15  
-
-
20  
15  
-
-
20  
15  
-
-
20  
15  
-
-
ns  
ns  
tWR  
Internal Write to Read  
Command Delay  
tWTR  
2
-
1
-
1
-
1
-
1
-
tCK  
(tWR/  
tCK)  
+
(tWR/  
tCK)  
+
(tWR/  
tCK)  
+
(tWR/  
tCK)  
+
(tWR/  
tCK)  
+
Auto Precharge Write  
Recovery + Precharge  
Time22  
tDAL  
-
-
-
-
-
tCK  
(tRP/tCK)  
(tRP/tCK)  
(tRP/tCK)  
(tRP/tCK)  
(tRP/tCK)  
CL = 3  
System  
5
-
10  
-
-
-
-
-
-
-
-
-
Clock Cycle  
Time24  
CL = 2.5  
tCK  
6
12  
7.5  
12  
7.5  
12  
8.0  
10  
12  
12  
ns  
ns  
CL = 2  
-
-
7.5  
0.45  
0.45  
12  
7.5  
12  
10  
12  
Clock High Level Width  
Clock Low Level Width  
tCH  
tCL  
0.45  
0.45  
0.55  
0.55  
0.55  
0.55  
0.45  
0.45  
0.55  
0.55  
0.45  
0.45  
0.55  
0.55  
0.45  
0.45  
0.55 tCK  
0.55 tCK  
Data-Out edge to Clock  
edge Skew  
tAC  
-0.7  
-0.55  
-
0.7  
0.55  
0.4  
-0.7  
-0.6  
-
0.7  
0.6  
-0.75  
-0.75  
-
0.75  
0.75  
0.5  
-0.75  
-0.75  
-
0.75  
0.75  
0.5  
-0.75  
-0.75  
-
0.75  
0.75  
0.6  
ns  
ns  
ns  
DQS-Out edge to Clock  
edge Skew  
tDQSCK  
tDQSQ  
DQS-Out edge to Data-  
Out edge Skew21  
0.45  
Data-Out hold time  
from DQS20  
tHP  
-tQHS  
tHP  
-tQHS  
tHP  
-tQHS  
tHP  
-tQHS  
tHP  
-tQHS  
tQH  
tHP  
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
min  
(tCL,tCH)  
min  
(tCL,tCH)  
min  
(tCL,tCH)  
min  
(tCL,tCH)  
min  
(tCL,tCH)  
Clock Half Period19,20  
Data Hold Skew  
Factor20  
tQHS  
tDV  
-
0.5  
-
0.55  
-
0.75  
-
0.75  
-
0.75  
Valid Data Output  
Window  
tQH-tDQSQ  
tQH-tDQSQ  
tQH-tDQSQ  
tQH-tDQSQ  
tQH-tDQSQ  
Rev. 1.3 / Feb. 2006  
11  
11  
200pin DDR SDRAM SO-DIMMs  
- Continue  
DDR400B  
DDR333  
DDR266A  
Min Max  
DDR266B  
DDR200  
Parameter  
Symbol  
UNIT  
Min Max  
Min Max  
Min  
Max  
Min  
Max  
Data-out high-impedance window  
from CK,/CK10  
tHZ  
tLZ  
tIS  
tIH  
tIS  
-0.7  
-0.7  
0.6  
0.6  
0.7  
0.7  
-0.7  
-0.7  
0.75  
0.75  
0.8  
0.7  
-0.75 0.75  
-0.75 0.75  
-0.75  
0.75  
-0.8  
-0.8  
1.1  
1.1  
1.1  
1.1  
0.8  
ns  
ns  
ns  
ns  
ns  
ns  
Data-out low-impedance window  
from CK, /CK10  
0.7  
0.7  
-0.75  
0.9  
0.75  
0.8  
Input Setup Time (fast slew  
rate)14,16-18  
-
-
-
-
-
-
-
-
0.9  
0.9  
1.0  
1.0  
-
-
-
-
-
-
-
-
-
-
-
-
Input Hold Time (fast slew  
rate)14,16-18  
0.9  
Input Setup Time (slow slew  
rate)15-18  
1.0  
Input Hold Time (slow slew  
rate)15-18  
tIH  
0.7  
2.2  
0.8  
1.0  
Input Pulse Width17  
tIPW  
-
-
-
2.2  
-
-
-
2.2  
-
-
-
2.2  
-
-
-
2.5  
-
-
-
ns  
Write DQS High Level Width  
Write DQS Low Level Width  
tDQSH 0.35  
tDQSL 0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
tCK  
tCK  
Clock to First Rising edge of DQS-  
In  
tDQSS 0.72  
1.25  
0.75  
0.2  
1.25  
0.75  
0.2  
1.25  
0.75  
0.2  
1.25  
0.75  
0.2  
1.25  
tCK  
tCK  
tCK  
DQS falling edge to CK setup time  
tDSS  
tDSH  
0.2  
0.2  
-
-
-
-
-
-
-
-
-
-
DQS falling edge hold time from  
CK  
0.2  
0.2  
0.2  
0.2  
DQ & DM input setup time25  
DQ & DM input hold time25  
tDS  
tDH  
0.4  
0.4  
-
-
0.45  
0.45  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
0.6  
0.6  
-
-
ns  
ns  
DQ & DM Input Pulse Width17  
Read DQS Preamble Time  
Read DQS Postamble Time  
tDIPW 1.75  
-
1.1  
0.6  
-
1.75  
0.9  
0.4  
0
-
1.1  
0.6  
-
1.75  
0.9  
0.4  
0
-
1.1  
0.6  
-
1.75  
0.9  
0.4  
0
-
1.1  
0.6  
-
2
0.9  
0.4  
0
-
1.1  
0.6  
-
ns  
tRPRE  
tRPST  
0.9  
0.4  
0
tCK  
tCK  
ns  
Write DQS Preamble Setup Time12  
Write DQS Preamble Hold Time  
tWPRES  
tWPREH 0.25  
-
0.25  
0.4  
2
-
0.25  
0.4  
2
-
0.25  
0.4  
2
-
0.25  
0.4  
2
-
tCK  
tCK  
tCK  
Write DQS Postamble Time11  
Mode Register Set Delay  
tWPST  
tMRD  
0.4  
2
0.6  
-
0.6  
-
0.6  
-
0.6  
-
0.6  
-
Exit Self Refresh to non-Read  
command23  
tXSNR  
tXSRD  
tREFI  
75  
200  
-
-
-
75  
200  
-
-
-
75  
200  
-
-
-
75  
200  
-
-
-
80  
200  
-
-
-
ns  
tCK  
us  
Exit Self Refresh to Read  
command  
Average Periodic Refresh  
Interval13,25  
7.8  
7.8  
7.8  
7.8  
7.8  
Rev. 1.3 / Feb. 2006  
12  
11  
200pin DDR SDRAM SO-DIMMs  
Note:  
1. All voltages referenced to Vss.  
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,  
but the related specifications and device operation are guaranteed for the full voltage range specified.  
3. Below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to  
be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production  
tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment.  
Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester elec-  
tronics).  
VDDQ  
50 Ω  
Output  
(VOUT)  
30 pF  
Figure: Timing Reference Load  
4. AC timing and IDD tests may use a VIL to VIHswing of up to 1.5 V in the test environment, but input timing is still referenced to  
VREF (or to the crossing point for CK, /CK), and parameter specifications are guaranteed for the specified ac input levels under  
normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).  
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result  
of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the  
dc input LOW (HIGH) level.  
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE < 0.2VDDQ is  
recognized as LOW.  
7. The CK, /CK input reference level (for timing referenced to CK, /CK) is the point at which CK and /CK cross; the input reference  
level for signals other than CK, /CK is VREF.  
8. The output timing reference voltage level is VTT.  
9. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must  
be powered down and then restarted through the specified initialization sequence before normal operation can continue.  
10. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to  
a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).  
11. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but  
system performance (bus turnaround) will degrade accordingly.  
12. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A  
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previ-  
ously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could  
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.  
13. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.  
14. For command/address input slew rate 1.0 V/ns.  
15. For command/address input slew rate 0.5 V/ns and 1.0 V/ns  
16. For CK & /CK slew rate 1.0 V/ns (single-ended)  
17. These parameters guarantee device timing, but they are not necessarily tested on each device.  
They may be guaranteed by device design or tester correlation.  
18. Slew Rate is measured between VOH(ac) and VOL(ac).  
19. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this  
value can be greater than the minimum specification limits for tCL and tCH).  
For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half  
period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.  
Rev. 1.3 / Feb. 2006  
13  
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200pin DDR SDRAM SO-DIMMs  
20.tQH = tHP - tQHS, where:  
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The  
pulse duration distortion of on-chip clock circuits; and 2) The worst case push--out of DQS on one transition followed by the  
worst case pull--in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects,  
and p-channel to n-channel variation of the output drivers.  
21. tDQSQ:  
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given  
cycle.  
22. tDAL = (tWR/tCK) + (tRP/tCK)  
For each of the terms above, if not already an integer, round to the next highest integer.  
Example: For DDR266B at CL=2.5 and tCK=7.5 ns  
tDAL = ((15 ns / 7.5 ns) + (20 ns / 7.5 ns)) clocks  
= ((2) + (3)) clocks  
= 5 clocks  
23. In all circumstances, tXSNR can be satisfied using  
tXSNR = tRFCmin + 1*tCK  
24. The only time that the clock frequency is allowed to change is during self-refresh mode.  
25. If refresh timing or tDS/tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid  
READ can be executed.  
Rev. 1.3 / Feb. 2006  
14  
11  
200pin DDR SDRAM SO-DIMMs  
SYSTEM CHARACTERISTICS CONDITIONS for DDR SDRAMS  
The following tables are described specification parameters that required in systems using DDR devices to ensure  
proper performannce. These characteristics are for system simulation purposes and are guaranteed by design.  
Input Slew Rate for DQ/DM/DQS (Table a.)  
AC CHARACTERISTICS  
PARAMETER  
DDR400  
DDR333  
DDR266  
DDR200  
UNIT Note  
Symbol  
min  
max  
min  
max  
min  
max  
min  
max  
DQ/DM/DQS input slew rate  
measured between VIH(DC),  
VIL(DC) and VIL(DC), VIH(DC)  
DCSLEW  
0.5  
4.0  
0.5  
4.0  
0.5  
4.0  
0.5  
4.0  
V/ns  
1,12  
Address & Control Input Setup & Hold Time Derating (Table b.)  
Input Slew Rate  
0.5 V/ns  
Delta tIS  
0
Delta tIH  
UNIT  
ps  
Note  
0
0
0
9
9
9
0.4 V/ns  
+50  
ps  
0.3 V/ns  
+100  
ps  
DQ & DM Input Setup & Hold Time Derating (Table c.)  
Input Slew Rate  
0.5 V/ns  
Delta tDS  
0
Delta tDH  
UNIT  
ps  
Note  
11  
0
0
0
0.4 V/ns  
+75  
ps  
11  
0.3 V/ns  
+150  
ps  
11  
DQ & DM Input Setup & Hold Time Derating for Rise/Fall Delta Slew Rate (Table d.)  
Input Slew Rate  
Delta tDS  
0
Delta tDH  
UNIT  
ps  
Note  
10  
0
± 0.0 ns/V  
+50  
+50  
+100  
ps  
10  
± 0.25 ns/V  
± 0.5 ns/V  
+100  
ps  
10  
Output Slew Rate Characteristics (for x4, x8 Devices) (Table e.)  
Slew Rate  
Characteristic  
TypicalRange  
(V/ns)  
Minimum  
(V/ns)  
Maximum  
(V/ns)  
Note  
Pullup Slew Rate  
1.2 - 2.5  
1.2 - 2.5  
1.0  
1.0  
4.5  
4.5  
1,3,4,6,7,8  
2,3,4,6,7,8  
Pulldown Slew Rate  
Output Slew Rate Characteristics (for x16 Device) (Table f.)  
Slew Rate  
Characteristic  
TypicalRange  
(V/ns)  
Minimum  
(V/ns)  
Maximum  
(V/ns)  
Note  
Pullup Slew Rate  
1.2 - 2.5  
1.2 - 2.5  
1.0  
1.0  
4.5  
4.5  
1,3,4,6,7,8  
2,3,4,6,7,8  
Pulldown Slew Rate  
Output Slew Rate Matching Ratio Characteristics (Table g.)  
Slew Rate Characteristic  
Parameter  
DDR266A  
DDR266B  
DDR200  
Note  
min  
max  
min  
max  
min  
max  
Output Slew Rate Matching Ratio  
(Pullup to Pulldown)  
-
-
-
-
0.71  
1.4  
5,12  
Rev. 1.3 / Feb. 2006  
15  
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200pin DDR SDRAM SO-DIMMs  
Note:  
1. Pullup slew rate is characterized under the test conditions as shown in below Figure.  
Test Point  
Output  
(VOUT)  
Ω
50  
VSSQ  
Figure: Pullup Slew rate  
2. Pulldown slew rate is measured under the test conditions shown in below Figure.  
VDDQ  
Ω
50  
Output  
(VOUT)  
Test Point  
Figure: Pulldown Slew rate  
3. Pullup slew rate is measured between (VDDQ/2 - 320 mV ± 250mV)  
Pulldown slew rate is measured between (VDDQ/2 + 320mV ± 250mV)  
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output  
switching.  
Example: For typical slew, DQ0 is switching  
For minimum slew rate, all DQ bits are switching worst case pattern  
For maximum slew rate, only one DQ is switching from either high to low, or low to high.  
The remaining DQ bits remain the same as for previous state.  
4. Evaluation conditions  
Typical: 25 oC (Ambient), VDDQ = nominal, typical process  
Minimum: 70 oC (Ambient), VDDQ = minimum, slow-slow process  
Maximum: 0 oC (Ambient), VDDQ = Maximum, fast-fast process  
5. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature  
and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process  
variation.  
6. Verified under typical conditions for qualification purposes.  
7. TSOP-II package devices only.  
8. Only intended for operation up to 256 Mbps per pin.  
9. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table b.  
The Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), sim-  
ilarly for rising transitions.  
10. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables c  
& d. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, fall rate. Input slew rate is based on  
the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The  
delta rise/fall rate is calculated as:  
{1/(Slew Rate1)} - {1/(slew Rate2)}  
For example:  
If Slew Rate 1 is 0.5 V/ns and Slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is -0.5 ns/V. Using the table given, this would  
result in the need for an increase in tDS and tDH of 100ps.  
11. Table c is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the  
lesser of the AC-AC slew rate and the DC-DC slew rate. The input slew rate is based on the lesser of the slew rates determined by  
either VIH(ac) to VIL(AC) or VIH(DC) to VIL(DC), and similarly for rising transitions.  
12. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal tran-  
sitions through the DC region must be monotonic.  
Rev. 1.3 / Feb. 2006  
16  
11  
200pin DDR SDRAM SO-DIMMs  
SIMPLIFIED COMMAND TRUTH TABLE  
ADDR  
Command  
CKEn-1  
CKEn  
/CS  
/RAS  
/CAS  
/WE  
A10/AP  
BA  
Note  
Extended Mode Register Set  
Mode Register Set  
Device Deselect  
No Operation  
H
H
X
X
L
L
L
L
L
L
L
L
OP code  
OP code  
1,2  
1,2  
H
L
X
H
L
X
H
H
X
H
H
H
H
H
X
X
X
X
1
Bank Active  
L
RA  
V
V
1
1
Read  
L
H
L
L
L
L
H
H
L
L
L
H
L
CA  
CA  
X
Read with Autoprecharge  
Write  
1,3  
1
H
H
X
X
V
Write with Autoprecharge  
Precharge All Banks  
Precharge selected Bank  
Read Burst Stop  
Auto Refresh  
H
H
L
1,4  
1,5  
1
X
V
H
L
H
H
H
X
H
L
L
L
H
L
H
L
L
H
H
X
H
X
H
X
H
X
V
X
X
1
1
Entry  
L
L
L
1
Self Refresh  
Exit  
H
L
X
H
X
H
X
H
X
V
X
H
X
H
X
H
X
V
X
X
X
L
H
L
H
L
1
H
L
1
1
1
1
1
1
1
Entry  
Precharge Power  
Down Mode  
H
L
Exit  
H
H
L
Entry  
Exit  
H
L
L
Active Power Down  
Mode  
H
X
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )  
Note :  
1. DM states are Don’t Care. Refer to below Write Mask Truth Table.  
2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Registering during Extended MRS or MRS.  
Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP  
period from Prechagre command.  
3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented  
to activated bank until CK(n+BL/2+tRP).  
4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented  
to activated bank until CK(n+BL/2+1+tWR+tRP). Write Recovery Time(tWR) is needed to guarantee that the last data has been  
completely written.  
5. If A10/AP is High when Row Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.  
WRITE MASK TRUTH TABLE  
Function  
CKEn-1  
CKEn  
/CS, /RAS, /CAS, /WE  
DM  
L
ADDR A10/AP  
BA  
Note  
Data Write  
H
H
X
X
X
X
X
X
1
1
Data-In Mask  
H
Note:  
1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data.  
In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.  
Rev. 1.3 / Feb. 2006  
17  
11  
200pin DDR SDRAM SO-DIMMs  
PACKAGE DIMENSIONS  
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD532M646C[L]P6  
Millimeters  
Inches  
Un it :  
Front  
67.60 mm  
2.00 mm  
Component  
Keepout  
Area  
2.00 mm  
31.75 mm  
20.00 mm  
Side  
3.8mm  
MAX.  
1
2
39  
40  
41  
42  
199  
200  
Back  
2.0 mm  
2.0 mm  
(Front)  
1.1mm  
MAX.  
# The location and number of additional  
device can be different from real product  
Rev. 1.3 / Feb. 2006  
18  
11  
200pin DDR SDRAM SO-DIMMs  
PACKAGE DIMENSIONS  
512MB, 64M x 64 Unbuffered SO-DIMM: HYMD564M646C[L]P6  
Millimeters  
Inches  
Un it :  
Front  
67.60 mm  
2.00 mm  
Component  
Keepout  
Area  
2.00 mm  
31.75 mm  
20.00 mm  
1
39  
41  
199  
Side  
Back  
3.8mm  
2.0 mm  
2.0 mm  
MAX.  
2
40  
42  
200  
(Front)  
1.1mm  
MAX.  
Rev. 1.3 / Feb. 2006  
19  
11  
200pin DDR SDRAM SO-DIMMs  
REVISION HISTORY  
Revision  
History  
Date  
Remark  
1.0  
1.1  
First Version Release  
Mar. 2005  
Apr. 2005  
Added x16 based 32Mx64 configuration - HYMD532M646C[L]P6  
Leaded products removed  
IDD specification revised  
1.2  
1.3  
July 2005  
Feb. 2006  
IDD6 specification revised  
Rev. 1.3 / Feb. 2006  
20  
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