SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZT560
ISSUE 1– NOVEMBER 1998
FEATURES
C
*
*
*
500 Volt VCEO
150mA continuous current
Ptot = 2 Watt
E
C
B
PARTMARKING DETAIL –
FZT560
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-500
Collector-Emitter Voltage
Emitter-Base Voltage
-500
V
-5
-500
V
Peak Pulse Current
mA
mA
W
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-150
Ptot
2
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -500
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -500
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-100
-100
-100
nA
nA
nA
VCB=-500V
ICES
VCE=-500V
IEBO
VEB=-5V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.20
-0.5
V
V
IC=-20mA, IB=-2mA
IC=-50mA, IB=-10mA*
Base-Emitter Saturation
Voltage
VBE(sat)
-0.9
V
IC=-50mA, IB=-10mA*
Base-Emitter Turn On Voltage
VBE(on)
hFE
-0.9
V
IC=-50mA, VCE=-10V*
Static Forward Current
Transfer Ratio
100
300
300
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
80
15 typ
Transition Frequency
fT
60
MHz
pF
IC=-10mA, VCE=-20V
f=50MHz
Output Capacitance
Switching times
Cobo
8
VCB=-20, f=1MHz
ton
toff
110 typ.
1.5 typ
ns
µs
VCE=-100, IC=-50mA,
I
B1=-5mA,IB2=10mA,
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
