SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH VOLTAGE TRANSISTOR
ISSUE 2 DECEMBER 1995
FZT558
FEATURES
*
*
*
400 Volt VCEO
C
200mA continuous current
Ptot= 2 Watt
E
C
PARTMARKING DETAIL -
FZT558
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VALUE
-400
-400
-5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
VCEO
V
Emitter-Base Voltage
VEBO
V
Continuous Collector Current
Power Dissipation
IC
-200
2
mA
W
Ptot
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Tj:Tstg
= 25°C).
-55 to +150
°C
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO -400
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VBR(CEO)
-400
-5
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO
Voltage
IE=-100µA
Collector Cut-Off Current ICBO
Collector Cut-Off Current ICES
-100
-100
-100
nA
nA
nA
VCB=-320V
VCE=-320V
VEB=-4V
Emitter Cut-Off Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2
-0.5
V
V
IC=-20mA, IB=-2mA*
IC=-50mA, IB=-6mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.9
V
IC=-50mA, IB=-5mA*
Base-Emitter
Turn On Voltage
-0.9
V
IC=-50mA, VCE=-10V*
Static Forward Current
Transfer Ratio
100
100
15
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
300
5
Transition
Frequency
fT
50
MHz
pF
IC=-10mA, VCE=-20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
VCB=-20V, f=1MHz
Switching times
ton
toff
95
1600
ns
ns
IC=-50mA, VC=-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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