SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
FZT2907
FZT2907A
ISSUE 4 JUNE 1996
✪
FEATURES
*
*
60 Volt VCEO
C
Fast switching
PARTMARKING DETAIL
FZT2907 FZT2907
E
FZT2907A FZT2907A
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL FMMT2907 FMMT2907A
UNIT
V
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
-60
Collector-Emitter Voltage
Emitter-Base Voltage
-40
-60
V
-5
-600
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
mA
mW
°C
Ptot
1.5
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
FZT2907
FZT2907A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
-40
-60
-5
-60
-60
-5
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V
IC=-10mA, IB=0*
IE=-10µA, IC=0
Emitter-Base
Breakdown Voltage
V
Collector-Emitter
Cut-Off Current
-50
-50
nA
VCE=-30V, VBE=-0.5V
Collector Cut-Off
Current
ICBO
-20
-20
-10
-10
nA
µA
VCB=-50V, IE=0
VCB=-50V, IE=0, Tamb=150°C
Base Cut-Off Current IB
-50
-50
nA
VCE=-30V, VBE=-0.5V
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
hFE
-0.4
-1.6
-0.4
-1.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
-1.3
-2.6
-1.3
-2.6
V
V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
Static Forward
Current Transfer
Ratio
35
50
75
100
30
75
IC=-0.1mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
100
100
100
50
300
300
Transition
Frequency
fT
200
200
MHz IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤ 2%
3 - 298
