SOT223 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT2222A
FEATURES
*
*
40 Volt VCEO
C
Fast switching
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT2907A
FZT2222A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
75
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
5
600
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
mA
W
Ptot
2
Tj:Tstg
-55 to+150
°C
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
VALUE
MIN. MAX.
75
UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO
Voltage
V
V
V
IC=10µA, IE=0
IC=10mA, IB=0 *
IE=10µA, IC=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
40
6
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
10
10
nA
µA
VCB=50V, IE=0
VCB=50V, IE=0, Tamb=150°C
Emitter Cut-Off Current
IEBO
ICEX
10
10
nA
nA
VEB=3V, IC=0
Collector-Emitter Cut-Off
Current
VCE=60V, VEB(off)=3V
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
hFE
0.3
1.0
V
V
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
0.6
1.2
2.0
V
V
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
Static Forward Current
Transfer Ratio
35
50
75
35
100
50
40
IC=0.1mA, VCE=10V*
IC=1mA, VCE=10V *
IC=10mA, VCE=10V*
IC=10mA, VCE=10V,Tamb=-55°C*
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
300
IC=500mA, VCE=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
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