找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

FZT1151A

型号:

FZT1151A

描述:

PNP硅平面中功率高增益晶体管[ PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

4 页

PDF大小:

100 K

PNP SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ISSUE 1 - JANUARY 1997  
FZT1151A  
FEATURES  
C
*
*
*
*
*
VCEO= -40V  
3 Amp Continuous Current  
5 Amp Pulse Current  
Low saturation Voltage  
High Gain  
E
C
B
SOT223  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
-45  
-40  
V
-5  
V
-5  
-3  
A
Continuous Collector Current  
Base Current  
IC  
A
IB  
-500  
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Ptot  
2.5  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
† The power which can be dissipated assuming the device is mounted in a typical manner on  
a P.C.B. with copper equal to 2 inches x 2 inches  
FZT1151A  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
VALUE  
PARAMETER  
SYMBOL  
UNIT  
V
CONDITIONS.  
IC=-100µA  
MIN.  
TYP.  
-95  
MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO -45  
Collector-Emitter  
VCES  
VCEO  
VCEV  
-40  
-40  
-40  
-90  
-85  
-90  
-8.5  
-0.3  
V
IC=-100µA  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
V
I =-10mA *  
C
Collector-Emitter  
Breakdown Voltage  
V
I =-100µA, VEB=+1V  
C
Emitter-Base  
Breakdown Voltage  
V(BR)EBO -5  
V
IE=-100µA  
VCB=-36V  
VEB=-4V  
Collector Cut-Off  
Current  
ICBO  
-100  
nA  
Emitter Cut-Off Current IEBO  
-0.3  
-0.3  
-100  
-100  
nA  
nA  
Collector Emitter  
Cut-Off Current  
ICES  
V
=-32V  
CE  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-60  
-90  
mV  
mV  
mV  
mV  
mV  
IC=-0.1A, IB=-1.0mA*  
IC=-0.5A, IB=-5mA*  
IC=-1A, IB=-20mA*  
IC=-1.8A, IB=-70mA*  
IC=-3A, IB=-250mA*  
-120  
-140  
-170  
-200  
-180  
-220  
-260  
-300  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-985  
-1100  
mV  
IC=-3A, IB=-250mA*  
Base-Emitter Turn-On  
Voltage  
VBE(on)  
-850  
-1000  
mV  
I =-3A, VCE=-2V*  
C
Static Forward Current hFE  
Transfer Ratio  
270  
250  
180  
100  
450  
400  
300  
190  
45  
IC=-10mA, VCE=-2V*  
IC=-0.5A, VCE=-2V*  
IC=-2A, VCE=-2V*  
IC=-3A, VCE=-2V*  
IC=-5A, VCE=-2V*  
800  
Transition Frequency  
fT  
145  
MHz  
IC=-50mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Ccb  
ton  
40  
pF  
ns  
VCB=-10V, f=1MHz  
170  
IC=-2A, IB=-20mA,  
V
CC=-30V  
toff  
460  
ns  
IC=-2A, IB=±20mA,  
V
CC=-30V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.  
FZT1151A  
TYPICAL CHARACTERISTICS  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
+25°C  
IC/IB=100  
0.8  
IC/IB=10  
0.6  
0.4  
0.2  
0
-55°C  
+25°C  
+100°C  
IC/IB=50  
IC/IB=100  
IC/IB=200  
1m  
1m  
1m  
10m  
100m  
1
10  
10  
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
750  
500  
250  
0
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VCE=2V  
IC/IB=100  
-55°C  
+25°C  
+100°C  
+100°C  
+25°C  
-55°C  
100m  
1m  
10m  
100m  
1
10  
10m  
1
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
1.2  
0.9  
0.6  
0.3  
0
10  
1
VCE=2V  
DC  
1s  
100ms  
10ms  
1ms  
100us  
100m  
-55°C  
+25°C  
+100°C  
10m  
100m  
10m  
100m  
1
1
10  
100  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
FZT1151A  
THERMAL CHARACTERISTICS  
4
D = 1  
50  
D=t1  
t1  
3
2
tP  
40  
tP  
30  
D=0.5  
D=0.2  
D=0.1  
20  
10  
0
1
D=0.05  
Single Pulse  
0
100µs 1ms 10ms 100ms  
1s  
10s  
100s  
0
20  
40  
60  
80 100 120 140 160  
Pulse Width  
T - Ambient Temperature (°C)  
Transient Thermal Resistance  
Derating curve  
SPICE PARAMETERS  
*ZETEX FZT1151A Spice model Last revision 12/12/96  
*
.MODEL  
FZT1151A PNP IS =1.7e-12 NF =1.004 ISE=1.02e-13  
NE =1.55 BF =562 VAF=26.01 IKF=3.5 NR =.97  
+
+
+
+
*
ISC= 1.5e-13 NC =1.3 BR =38 VAR=2.41 IKR=0.3  
RE =25.37e-3 RB =250e-3 RC =25e-3 CJE=440e-12  
CJC=160e-12 VJC=1.058 MJC= 0.5678 TF =0.8e-9 TR =55.5e-9  
1995 ZETEX PLC  
The copyright in this modeland the design embodied belong to Zetex PLC(“Zetex”). It issupplied  
free of charge by Zetex for the purpose of research and design and may be used or copied intact  
(including this notice) for that purpose only. All other rights are reserved. The model is believed  
accurate but no condition or warranty as to its merchantability or fitness for purpose is given  
and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.  
厂商 型号 描述 页数 下载

ZETEX

FZT1047A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 4 页

KEXIN

FZT1047A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

DIODES

FZT1047A SOT223 NPN硅平面[ SOT223 NPN SILICON PLANAR ] 4 页

TYSEMI

FZT1047A 5安培连续电流20安培的脉冲电流。[ 5 Amp continuous current, 20 Amp pulse current. ] 2 页

DIODES

FZT1047ATA [ 暂无描述 ] 4 页

ZETEX

FZT1047ATA [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

FZT1047ATC [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

FZT1048 [ 暂无描述 ] 3 页

ZETEX

FZT1048A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 3 页

KEXIN

FZT1048A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.196146s