找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

FZT1053

型号:

FZT1053

描述:

NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

4 页

PDF大小:

65 K

SOT223 NPN SILICON PLANAR  
MEDIUM POWER HIGH GAIN TRANSISTOR  
ISSUE 2 - MARCH 2001  
FZT1053A  
FEATURES  
C
*
*
*
*
*
*
VCEO = 75V  
4.5 Amp Continuous Current  
10 Amp Pulse Current  
Low Saturation Voltage  
High Gain  
E
C
B
SOT223  
Extremely Low Equivalent On-resistance; RCE(sat) = 78mat 4.5A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
150  
75  
7.5  
V
V
Peak Pulse Current  
10  
A
Continuous Collector Current  
Base Current  
IC  
4.5  
A
IB  
500  
mA  
W
°C  
Power Dissipation at Tamb=25°C †  
Ptot  
2.5  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
The power which can be dissipated assuming the device is mounted in typical manner on a PCB  
with copper equal to 2 inches x 2 inches.  
FZT1053A  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT CONDITIONS.  
Collector-Base  
V(BR)CBO 150  
250  
250  
100  
250  
8.8  
V
IC=100µA  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
VCES  
VCEO  
VCEV  
150  
75  
V
I =100µA  
C
Collector-Emitter  
Breakdown Voltage  
V
I =10mA  
C
Collector-Emitter  
Breakdown Voltage  
150  
V
I =100µA, VEB=1V  
C
Emitter-Base  
Breakdown Voltage  
V(BR)EBO 7.5  
V
IE=100µA  
VCB=120V  
VEB=4V  
Collector Cut-Off  
Current  
ICBO  
0.9  
10  
nA  
Emitter Cut-Off Current IEBO  
0.3  
1.5  
10  
10  
nA  
nA  
Collector Emitter  
Cut-Off Current  
ICES  
V
=120V  
CES  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
21  
30  
mV  
mV  
mV  
mV  
mV  
IC=0.2A, IB=20mA*  
IC=0.5A, IB=20mA*  
IC=1A, IB=10mA*  
IC=2A, IB=100mA*  
IC=4.5A, IB=200mA*  
55  
75  
150  
160  
350  
200  
210  
440  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
900  
1000  
mV  
IC=3A, IB=100mA*  
Base-Emitter Turn-On  
Voltage  
VBE(on)  
825  
950  
mV  
I =3A, VCE=2V*  
C
Static Forward Current hFE  
Transfer Ratio  
270  
300  
300  
40  
440  
450  
450  
60  
IC=10mA, VCE=2V*  
IC=0.5A, VCE=2V*  
IC=1A, VCE=2V*  
IC=4.5A, VCE=2V*  
IC=10A, VCE=2V*  
1200  
20  
Switching Times  
ton  
toff  
fT  
162  
900  
140  
21  
ns  
IC=2A, IB1=IB2=±20mA,  
VCC=50V  
ns  
IC=2A, IB1=IB2=±20mA,  
CC=50V  
V
Transition Frequency  
Output Capacitance  
MHz  
pF  
IC=50mA, VCE=10V  
f=100MHz  
Cobo  
30  
VCB=10V, f=1MHz  
FZT1053A  
TYPICAL CHARACTERISTICS  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
+25°C  
IC/IB=30  
-55°C  
+25°C  
IC/IB=10  
IC/IB=30  
IC/IB=100  
+100°C  
+150°C  
1m  
10m 100m  
1
10  
100  
1m  
10m 100m  
1
10  
100  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
1.6 IC/IB=30  
VCE=2V  
600  
400  
200  
0
+100°C  
+25°C  
-55°C  
1.2  
0.8  
0.4  
0
-55°C  
+25°C  
+100°C  
+150°C  
1m  
10m 100m  
IC - Collector Current (A)  
1
10  
100  
1m  
10m 100m  
1
10  
100  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
10  
1
VCE=2V  
1.2  
0.8  
0.4  
0
DC  
1s  
-55°C  
100m  
+25°C  
+100°C  
+150°C  
100ms  
10ms  
1ms  
100us  
10m  
100m  
1m  
10m 100m  
IC - Collector Current (A)  
1
10  
100  
1
10  
100  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
FZT1053A  
SPICE PARAMETERS  
*ZETEX FZT1053A Spice model Last revision 18/3/97  
*
.MODEL FZT1053A  
NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100  
+
+
+
+
*
ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15  
ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016  
CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367  
VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9  
(C) 1997 ZETEX PLC  
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for  
the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other  
rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for  
purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields  
New Road, Chadderton, Oldham OL9 8NP  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3701-04 Metroplaza, Tower 1  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
Zetex plc 2001  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied  
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or  
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of  
any product or service.  
厂商 型号 描述 页数 下载

ZETEX

FZT1047A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 4 页

KEXIN

FZT1047A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

DIODES

FZT1047A SOT223 NPN硅平面[ SOT223 NPN SILICON PLANAR ] 4 页

TYSEMI

FZT1047A 5安培连续电流20安培的脉冲电流。[ 5 Amp continuous current, 20 Amp pulse current. ] 2 页

DIODES

FZT1047ATA [ 暂无描述 ] 4 页

ZETEX

FZT1047ATA [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

FZT1047ATC [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

FZT1048 [ 暂无描述 ] 3 页

ZETEX

FZT1048A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 3 页

KEXIN

FZT1048A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.250884s