SOT223 NPN SILICON PLANAR
FZT1051A
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 4 - FEBRUARY 1998
FEATURES
C
*
*
*
*
*
*
VCEO = 40V
5 Am p Continuous Current
20 Am p Pulse Current
E
C
Low Saturation Voltage
B
High Gain
Extrem ely Low Equivalent On-resistance; RCE(sat) = 50m Ω at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
150
40
V
5
V
Pe ak Pu ls e Cu rre n t
10
A
Co n tin u o u s Co lle cto r Cu rre n t
Bas e Cu rre n t
IC
5
500
A
IB
m A
W
Po w er Dis s ip atio n a t Ta m b=25°C †
Pto t
2.5
Op eratin g a n d S to ra g e Te m p e ratu re
Ran g e
Tj:Ts tg
-55 to +150
°C
†
The power which can be dissipated assum ing the device is m ounted in typical m anner on a PCB
with copper equal to 2 inches x 2 inches.
