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NZT605

型号：

NZT605

描述：

NPN达林顿晶体管[ NPN Darlington Transistor ]

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

3 页

PDF大小：

40 K

下载PDF手册
NZT605  
NPN Darlington Transistor  
4
•
This device designed for applications requiring extremely high gain at  
collector currents to 1.0A and high breakdown voltage.  
Sourced from process 06.  
•
3
2
1
SOT-223  
1. Base 2.4. Collector 3. Emitter  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
110  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
140  
V
CBO  
EBO  
10  
V
I
- Continuous  
1.5  
A
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ +150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are baseed on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 10mA, I = 0  
110  
140  
10  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 100µA, I = 0  
E
= 100µA, I = 0  
V
C
I
I
I
V
V
V
= 120V, I = 0  
10  
10  
nA  
nA  
nA  
CB  
CE  
EB  
E
Collector Cutoff Current  
= 120V, I = 0  
E
CES  
Emitter Cutoff Current  
= 8.0V, I = 0  
100  
EBO  
C
On Characteristics *  
h
DC Current Gain  
I
I
I
I
= 50mA, V = 5.0V  
2000  
5000  
2000 100K  
500  
FE  
C
C
C
C
CE  
= 500mA, V = 5.0V  
CE  
= 1.0A, V = 5.0V  
CE  
= 2.0A, V = 5.0V  
CE  
V
Collector-Emitter Saturation Voltage  
I
I
= 250mA, I = 0.25mA  
1
1.5  
V
CE(sat)  
C
C
B
= 1.0A, I = 1.0mA  
B
V
V
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= 1.0A, I = 1.0mA  
1.8  
1.7  
V
V
BE(sat)  
C
C
B
= 1.0A, V = 5.0V  
BE(on)  
CE  
Small Signal Characteristics  
Transition Frequency  
f
I
= 100mA, V = 10V, f = 20MHz  
150  
MHz  
T
C
CE  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
1,000  
8.0  
mW  
mW/°C  
D
R
Thermal Resistance, Junction to Ambient  
125  
°C/W  
θJA  
2
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm  
©2003 Fairchild Semiconductor Corporation  
Rev. A, June 2003  
Package Dimensions  
SOT-223  
3.00 ±0.10  
MAX1.80  
+0.04  
–0.02  
0.06  
2.30 TYP  
4.60 ±0.25  
0.70 ±0.10  
°
~10  
°
0
+0.10  
–0.05  
(0.95)  
(0.95)  
0.25  
6.50 ±0.20  
Dimensions in Millimeters  
©2003 Fairchild Semiconductor Corporation  
Rev. A, June 2003  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT™  
ImpliedDisconnect™ PACMAN™  
SPM™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™ FRFET™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
Across the board. Around the world.™  
The Power Franchise™  
FACT Quiet series™ ISOPLANAR™  
POP™  
Stealth™  
FAST®  
LittleFET™  
MicroFET™  
MicroPak™  
Power247™  
PowerTrench®  
QFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
FASTr™  
GlobalOptoisolator™ MICROWIRE™  
QS™  
GTO™  
HiSeC™  
I2C™  
MSX™  
MSXPro™  
OCX™  
QT Optoelectronics™ TinyLogic®  
Quiet Series™  
TruTranslation™  
RapidConfigure™  
RapidConnect™  
UHC™  
OCXPro™  
OPTOLOGIC®  
OPTOPLANAR™  
UltraFET®  
SILENT SWITCHER® VCX™  
SMART START™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2003 Fairchild Semiconductor Corporation  
Rev. I2  
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