Discrete POWER & Signal
Technologies
D44H8
NZT44H8
C
E
B
C
C
E
B
TO-220
SOT-223
NPN Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4Q.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
IC
Collector-Emitter Voltage
60
V
A
Collector Current - Continuous
8.0
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
D44H8
*NZT44H8
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
60
480
2.1
1.5
12
W
mW/°C
°C/W
Rθ
JC
Rθ
Thermal Resistance, Junction to Ambient
62.5
83.3
°C/W
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
