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SZP-2026Z

型号：

SZP-2026Z

描述：

2.2-2.7GHz 2W的InGaP放大器[ 2.2-2.7GHz 2W InGaP Amplifier ]

品牌：

SIRENZA[ SIRENZA MICRODEVICES ]

页数：

12 页

PDF大小：

558 K

下载PDF手册
Preliminary  
Product Description  
SZP-2026Z  
Sirenza Microdevices’ SZP-2026Z is a high linearity single  
stage class AB Heterojunction Bipolar Transistor (HBT)  
amplifier housed in a proprietary surface-mountable plastic  
encapsulated package. This HBT amplifier is made with  
InGaP on GaAs device technology and fabricated with  
MOCVD for an ideal combination of low cost and high reli-  
ability.  
2.2-2.7GHz 2W InGaP Amplifier  
RoHS Compliant  
Pb  
& Green Package  
This product is specifically designed as a flexible final or  
driver stage for 802.16 and 802.11 equipment in the 2.2-  
2.7GHz bands. It can run from a 3V to 6V supply. It is pre-  
matched to ~5 ohms on the input for broadband perfor-  
mance and ease of matching at the board level. It features  
an output power detector, on/off power control, ESD protec-  
tion, excellent overall robustness and a proprietary hand  
reworkable and thermally enhanced SOF-26 package. This  
product features a RoHS Compliant and Green package  
with matte tin finish, designated by the ‘Z’ suffix.  
Proprietary SOF-26 Package  
Product Features  
• P1dB = 33.5dBm @ 5V, 2.4GHz  
• 802.11g 54Mb/s Class AB Performance  
Pout = 26dBm @ 2.5%EVM, Vcc 5V  
Pout = 27dBm @ 2.5% EVM, Vcc 6V  
• On-chip Output Power Detector  
• Input Prematched to ~5 ohms  
• Proprietary Low Thermal Resistance Package  
Hand Solderable and Easy Rework  
• Power up/down control < 1ms  
Functional Block Diagram  
Vcc = 5V  
SZP-2026  
RFOUT  
RFIN  
Active  
Bias  
Vbias=5V  
Applications  
• 802.16 WiMAX Driver or Output Stage  
• 2.4GHz 802.11 WLAN and ISM Applications  
Power  
Power  
Up/Down  
Detector  
Control  
Key Specifications  
Parameters: Test Conditions, 2.5-2.7GHz App circuit,  
Z0 = 50W, VCC = 5.0V, Iq = 445mA, TBP = 30ºC  
Symbol  
Unit  
Min.  
Typ.  
Max.  
fO  
P1dB  
S21  
Frequency of Operation  
MHz  
dBm  
dB  
2200  
31.5  
11.3  
2700  
Output Power at 1dB Compression – 2.7GHz  
Small Signal Gain – 2.7GHz  
33  
12.8  
26.2  
-45  
Pout  
IM3  
Output power at 2.5% EVM 802.11g 54Mb/s - 2.5GHz  
Third Order Suppression (Pout=23dBm per tone) - 2.7GHz  
Noise Figure at 2.7GHz  
dBm  
dBc  
dB  
-42  
NF  
4.3  
IRL  
Worst Case Input Return Loss 2.5-2.7GHz  
Worst Case Output Return Loss 2.5-2.7GHz  
Output Voltage Range for Pout=10dBm to 33dBm  
Quiescent Current (Vcc = 5V)  
8
8
12  
dB  
ORL  
Vdet Range  
Icq  
12  
V
0.85 to 1.4  
445  
mA  
395  
495  
10  
IVPC  
Power Up Control Current (Vpc = 5V)  
Vcc Leakage Current (Vcc = 5V, Vpc = 0V)  
Thermal Resistance (junction - lead)  
mA  
2.1  
Ileak  
mA  
Rth, j-l  
ºC/W  
12  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.  
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. SirenzaMicrodevices does not authorize or warrant any Sirenza Microdevices product  
for use in life-support devices and/or systems.  
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Typical Performance 2.4-2.5GHz App Circuit (Vcc=5V, Icq=445mA, * 802.11g 54Mb/s 64QAM)  
Parameter  
Units  
2.4GHz  
13.3  
33.5  
26  
2.5GHz  
13.0  
33.3  
26  
Gain  
dB  
P1dB  
dBm  
dBm  
mA  
Pout @ 2.5% EVM*  
Current @ Pout 2.5% EVM*  
Input Return Loss  
Output Return Loss  
550  
16  
545  
12  
dB  
dB  
16  
16  
Typical Performance 2.5-2.7GHz - Refer to page 1 table  
Pin Out Description  
Pin #  
Function  
VBIAS  
RFIN  
Description  
1
2
This is the supply voltage for the active bias circuit.  
This is the RF input pin and has a DC voltage present. An external DC block is required.  
Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 3 by  
more than 0.5V unless the supply current from pin 3 is limited < 10mA.  
3
VPC  
4
5
VDET  
This is the output port for the power detector. It samples the power at the input of the amplifier.  
This is the RF output pin and DC connection to the collector.  
RFOUT/VCC  
This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to  
achieve the specified performance.  
6
NC  
These pins are DC connected to the backside paddle. They provide good thermal connection to the  
backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recom-  
mended as shown in the landing pattern.  
GND  
GND  
Absolute Maximum Ratings  
Parameters  
Value  
1500  
7.0  
Unit  
mA  
V
VC1 Collector Bias Current (IVC1  
)
Simplified Device Schematic  
**Device Voltage (Vcc  
Power Dissipation  
)
GND  
6
W
Operating Lead Temperature (TL)  
-40 to +85  
ºC  
*Max RF output Power for 50 ohm contin-  
uous long term operation  
30  
28  
23  
dBm  
dBm  
dBm  
VBIAS  
RFIN  
VPC  
1
2
3
6
5
NC  
Bias  
Max RF Input Power for 50 ohm output  
load  
RFOUT/VCC  
VDET  
Max RF Input Power for 10:1 VSWR out-  
put load  
Storage Temperature Range  
Operating Junction Temperature (TJ)  
ESD Human Body Model  
-40 to +150  
+150  
ºC  
ºC  
V
4
1000  
GND  
Operation of this device beyond any one of these limits may  
cause permanent damage. For reliable continuous operation  
the device voltage and current must not exceed the maximum  
operating values specified in the table on page one.  
Caution: ESD Sensitive  
Appropriate precaution in handling, packaging  
Bias conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH’ j-l  
and testing devices must be observed.  
* With specified application circuit.  
** No RF Drive  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
EDS-104611 Rev C  
2
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C)  
Source EVM = 0.6%, not deembedded from data.  
EVM vs Pout F=2.5GHz  
EVM vs Pout F=2.4GHz  
802.11g, OFDM 54Mb/S, 64QAM  
802.11g, OFDM 54Mb/S, 64QAM  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
12  
14  
16  
18  
20  
22  
24  
26  
28  
12  
14  
16  
18  
20  
22  
24  
26  
28  
Pout(dBm)  
Pout(dBm)  
-40c  
+25c  
+85c  
-40c  
+25c  
+85c  
IM3 vs Pout (2 Tone Avg.),T=+25c  
Tone Spacing = 1MHz  
Typical Gain vs Pout, T=+25C  
15  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
14  
13  
12  
11  
10  
18  
20  
22  
24  
26  
28  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
Pout(dBm)  
Pout(dBm)  
2.4GHz  
2.5GHz  
2.4GHz 2.5GHz  
Typical Gain vs Pout, F=2.4GHz  
Typical Gain vs Pout, F=2.5GHz  
15  
14  
13  
12  
11  
10  
15  
14  
13  
12  
11  
10  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
Pout(dBm)  
Pout(dBm)  
-40c  
+25c  
-40c  
+25c  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C)  
Narrowband S11 - Input Return Loss  
Narrowband S12 - Reverse Isolation  
0
-5  
-20  
-22  
-24  
-26  
-28  
-30  
-32  
-10  
-15  
-20  
-25  
-30  
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
+85C  
+85C  
Narrowband S21 - Forward Gain  
Narrowband S22 - Output Return Loss  
15  
14  
13  
12  
11  
10  
9
0
-5  
-10  
-15  
-20  
-25  
8
7
6
5
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
+85C  
+85C  
DC Supply Current vs Pout, F=2.4GHz  
Noise Figure vs Frequency, O.T.  
1.1  
1
6
5.5  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
5
4.5  
4
3.5  
3
2.5  
2.3  
2.35  
2.4  
2.45  
2.5  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
Frequency(GHz)  
Pout(dBm)  
-40c  
+25c  
+85c  
-40c  
+25c  
+85c  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
4
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C)  
RF Power Detector (Vdet) vs Pout, F=2.5GHz  
RF Power Detector (Vdet) vs Pout, F=2.4GHz  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
0.9  
0.8  
0.9  
0.8  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
Pout(dBm)  
Pout(dBm)  
-40c  
+25c  
+85c  
-40c  
+25c  
+85c  
Broadband S11 - Input Return Loss  
Broadband S12 - Reverse Isolation  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-5  
-10  
-15  
-20  
-25  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency(GHz)  
Frequency(GHz)  
-40C  
+25C  
+85C  
-40C  
+25C  
+85C  
Broadband S21 - Forward Gain  
Broadband S22 - Output Return Loss  
15  
10  
5
0
-5  
-10  
-15  
-20  
-25  
0
-5  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency(GHz)  
Frequency(GHz)  
-40C  
+25C  
+85C  
-40C  
+25C  
+85C  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
5
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C)  
Source EVM = 0.6%, not deembedded from data.  
EVM vs Pout F=2.5GHz  
EVM vs Pout F=2.6GHz  
802.11g, OFDM 54Mb/S, 64QAM  
802.11g, OFDM 54Mb/S, 64QAM  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
12  
14  
16  
18  
20  
22  
24  
26  
28  
12  
14  
16  
18  
20  
22  
24  
26  
28  
28  
36  
Pout(dBm)  
Pout(dBm)  
-40c  
+25c  
+85c  
-40c  
+25c  
+85c  
IM3 vs Pout (2 Tone Avg.),T=+25c  
Tone Spacing = 1MHz  
EVM vs Pout F=2.7GHz  
802.11g, OFDM 54Mb/S, 64QAM  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
18  
20  
22  
24  
26  
2.7GHz  
12  
14  
16  
18  
20  
22  
24  
26  
28  
Pout(dBm)  
Pout(dBm)  
2.5GHz  
2.6GHz  
-40c  
+25c  
+85c  
Typical Gain vs Pout, F=2.5GHz  
Typical Gain vs Pout, T=+25C  
15  
15  
14  
13  
12  
11  
10  
14  
13  
12  
11  
10  
16  
18  
20  
22  
24  
26  
28  
30  
2.7GHz  
32  
34  
36  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
Pout(dBm)  
Pout(dBm)  
2.5GHz  
2.6GHz  
-40c  
+25c  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
6
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C)  
Typical Gain vs Pout, F=2.6GHz  
Typical Gain vs Pout, F=2.7GHz  
15  
14  
13  
12  
11  
10  
15  
14  
13  
12  
11  
10  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
Pout(dBm)  
Pout(dBm)  
+25c  
-40c  
-40c  
+25c  
Narrowband S11 - Input Return Loss  
Narrowband S12 - Reverse Isolation  
0
-22  
-24  
-26  
-28  
-30  
-32  
-34  
-36  
-5  
-10  
-15  
-20  
-25  
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
+85C  
+85C  
Narrowband S21 - Forward Gain  
Narrowband S22 - Output Return Loss  
14  
13  
12  
11  
10  
9
0
-5  
-10  
-15  
-20  
-25  
8
7
6
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
2.0  
2.1  
2.2  
2.3  
2.4  
Frequency(GHz)  
-40C +25C  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
+85C  
+85C  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
7
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C)  
DC Supply Current vs Pout, F=2.6GHz  
DC Supply Current vs Pout, T=+25C  
1.1  
1
1.1  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
16  
18  
20  
22  
24  
26  
28  
30  
32  
32  
32  
34  
34  
34  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
Pout(dBm)  
Pout(dBm)  
-40c  
+25c  
+85c  
2.5GHz  
2.6GHz  
2.7GHz  
Noise Figure vs Frequency, O.T.  
RF Power Detector (Vdet) vs Pout, F=2.5GHz  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
6
5.5  
5
4.5  
4
3.5  
3
0.9  
0.8  
2.5  
2.5  
2.55  
2.6  
2.65  
2.7  
16  
18  
20  
22  
24  
26  
28  
30  
Frequency(GHz)  
Pout(dBm)  
-40c  
+25c  
+85c  
-40c  
+25c  
+85c  
RF Power Detector (Vdet) vs Pout, F=2.6GHz  
RF Power Detector (Vdet) vs Pout, F=2.7GHz  
1.8  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
0.9  
0.8  
0.9  
0.8  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
16  
18  
20  
22  
24  
26  
28  
30  
Pout(dBm)  
Pout(dBm)  
-40c  
+25c  
+85c  
-40c  
+25c  
+85c  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
8
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C)  
Broadband S11 - Input Return Loss  
Broadband S12 - Reverse Isolation  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-15  
-20  
-25  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency(GHz)  
Frequency(GHz)  
-40C  
+25C  
+85C  
-40C  
+25C  
+85C  
Broadband S22 - Output Return Loss  
Broadband S21 - Forward Gain  
0
-5  
15  
10  
5
-10  
-15  
-20  
-25  
0
-5  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency(GHz)  
Frequency(GHz)  
-40C  
+25C  
+85C  
-40C  
+25C  
+85C  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
9
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
2.4-2.5 GHz Application Circuit For V+ = Vcc = Vpc = 5.0V  
Bias  
1
2
3
6
5
4
SZP-2026  
2.4-2.5GHz Evaluation Board Layout For V+ = Vcc = Vpc = 5.0V  
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper  
R2  
C1  
C3  
C2  
L1  
C4  
R1  
C5  
C8  
R4  
C6  
Q1  
C7  
R3  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
10  
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
2.5-2.7 GHz Application Circuit For V+ = Vcc = Vpc = 5.0V  
Bias  
1
2
3
6
5
4
SZP-2026  
2.5-2.7GHz Evaluation Board Layout For V+ = Vcc = Vpc = 5.0V  
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper  
R2  
C1  
C3  
C2  
L1  
C4  
R1  
C5  
C8  
R4  
C6  
Q1  
C7  
R3  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
11  
http://www.sirenza.com  
EDS-104611 Rev C  
Preliminary  
SZP-2026Z 2.2-2.7GHz 2W Power Amp  
Part Symbolization  
Part Number Ordering Information  
The part will be symbolized with “SZP-2026Z” to des-  
ignate it as a RoHS green compliant product. Marking  
designator will be on the top surface of the package.  
Part Number  
Reel Size  
Devices/Reel  
SZP-2026Z*  
13”  
3000  
* Matte tin finish  
Package Outline Drawing (dimensions in mm [in]):  
Recommended Metal Land Pattern (dimensions in mm [in]):  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
12  
http://www.sirenza.com  
EDS-104611 Rev C  
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