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IXTT52N30P

型号：

IXTT52N30P

描述：

PolarHT功率MOSFET[ PolarHT Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

577 K

下载PDF手册
Advanced Technical Information  
PolarHTTM  
Power MOSFET  
IXTQ52N30P  
IXTT52N30P  
VDSS  
ID25  
= 300 V  
= 52 A  
RDS(on) = 66 mΩ  
N-Channel Enhancement Mode  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
T
= 25°C to 150°C  
300  
300  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25°C  
52  
A
A
G
C
(TAB)  
TC = 25°C, pulse width limited by TJM  
150  
E
IAR  
TC = 25°C  
52  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
TO-268 (IXTT)  
1.0  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G
S
TC = 25°C  
400  
W
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
Features  
Weight  
TO-3P  
5.5  
5.0  
g
g
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
TO-268  
z
z
Symbol  
TestConditions  
Characteristic Values  
Low package inductance  
- easy to drive and to protect  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
2.5  
5.0  
Advantages  
100 nA  
z
Easy to mount  
z
IDSS  
VDS = VDSS  
VGS = 0 V  
25 µA  
250 µA  
Space savings  
z
TJ = 125°C  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
57  
66 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99115A(10/04)  
© 2004 IXYS All rights reserved  
IXTQ 52N30P  
IXTT 52N30P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-3P (IXTQ) Outline  
VDS = 10 V; ID = 0.5 ID25, pulse test  
20  
30  
S
Ciss  
Coss  
Crss  
3490  
550  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
130  
td(on)  
tr  
td(off)  
tf  
24  
22  
60  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
110  
25  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
53  
RthJC  
RthCK  
0.31  
K/W  
K/W  
(TO-3P)  
0.21  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
52  
150  
1.5  
A
ISM  
Repetitive  
A
V
TO-268 Outline  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
ns  
Trr  
IF = 25A  
-di/dt = 100 A/µs  
VR = 100V  
250  
3.0  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTQ 52N30P  
IXTT 52N30P  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
150  
125  
100  
75  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
9V  
VGS = 10V  
8V  
7V  
6V  
8V  
7V  
50  
6V  
5V  
25  
5V  
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
5
10  
15  
20  
25  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
VGS = 10V  
VGS = 10V  
8V  
7V  
ID = 52A  
ID = 26A  
6V  
5V  
0.8  
0.6  
0.4  
0
1
2
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.8  
3.4  
3
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
2.6  
2.2  
1.8  
1.4  
1
TJ = 125ºC  
TJ = 25ºC  
0.6  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100 125 150  
I
D
- Amperes  
T
C
- Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTQ 52N30P  
IXTT 52N30P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
0
10 20 30 40 50 60 70 80 90 100  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
150  
VDS = 150V  
ID = 26A  
G = 10mA  
125  
100  
75  
50  
25  
0
I
TJ = 125ºC  
TJ = 25ºC  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
20  
40  
60  
80  
100  
120  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Forw ard-Bias Safe  
Operating Area  
Fig. 11. Capacitance  
10000  
1000  
f = 1MHz  
TC = 25ºC  
RDS(on) Limit  
C
iss  
25µs  
100  
10  
1
1ms  
1000  
C
C
10ms  
oss  
rss  
DC  
100  
10  
100  
VD S - Volts  
1000  
0
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 52N30P  
IXTT 52N30P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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