IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
TO-3P Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
56
S
Ciss
Coss
Crss
6300
1150
240
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
25
26
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 3.3 Ω (External)
100
28
Qg(on)
Qgs
185
43
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
91
RthJC
RthCK
RthCK
0.21 K/W
K/W
TO-3P
0.21
0.15
TO-264
K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
100
A
A
V
TO-268 Outline
ISM
Repetitive
250
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
200
3.0
ns
QRM
µC
TO-264 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
