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IXTU01N100D

型号:

IXTU01N100D

描述:

N沟道,耗尽型高电压MOSFET[ N-Channel, Depletion Mode High Voltage MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

93 K

IXTP 01N100D  
IXTU 01N100D  
IXTY 01N100D  
VDSS = 1000 V  
ID25 = 100 mA  
RDS(on) = 110 Ω  
High Voltage MOSFET  
N-Channel,DepletionMode  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-220 (IXTP)  
VDSX  
VDGX  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VGS  
Continuous  
Transient  
± 20  
± 30  
V
V
AB)  
G
VGSM  
D
S
IDSS  
IDM  
TC = 25°C; TJ = 25°C to 150°C  
100  
400  
mA  
mA  
TC = 25°C, pulse width limited by TJ  
TO-251 (IXTU)  
PD  
TC = 25°C  
TA = 25°C  
25  
1.1  
W
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
D
-55 ... +150  
D (TAB)  
S
TL  
1.6 mm (0.063 in.) from case for 10 s  
Plastic case for 10 s (IXTU)  
300  
300  
°C  
°C  
TISOL  
Md  
TO-252 (IXTY)  
Mounting torque  
TO-220  
1.3 / 10 Nm/lb.  
Weight  
TO-220  
TO-251  
TO-252  
4
0.8  
0.8  
g
g
g
G
S
D (TAB)  
Pins: 1 - Gate  
2 - Drain  
3 - Source TAB - Drain  
Symbol  
TestConditions  
Characteristic Values  
min. typ. max.  
Features  
(TJ = 25°C, unless otherwise specified)  
z Normally ON mode  
VDSX  
VGS(off)  
VGS = -10 V, ID = 25 μA  
VDS = 25V, ID = 25 μA  
1000  
-2.5  
V
V
z Low RDS (on) HDMOSTM process  
z Ruggedpolysilicongatecellstructure  
z Fastswitchingspeed  
-5  
IGSS  
VGS = ± 20 VDC, VDS = 0  
±100 nA  
IDSX(off)  
VDS = VDSX,VGS = -10 V  
10 μA  
Applications  
TJ = 125°C  
Note 1  
250 μA  
z
Level shifting  
z
RDS(on)  
ID(on)  
VGS = 0 V, ID = 50 mA  
VGS = 0 V, VDS = 25V  
90  
110  
Ω
Triggers  
z
Solid state relays  
Note 1  
100  
mA  
z
Currentregulators  
© 2006 IXYS All rights reserved  
98809B (01/06)  
IXTP 01N100D  
TO-220 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDS = 50 V; ID = 100 mA  
Note1  
100  
150  
mS  
Ciss  
Coss  
Crss  
120  
25  
5
pF  
pF  
pF  
VGS = -10 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
VDS = 100 V V, ID = 50 mA  
VGS = 0 V to -10  
8
6
ns  
ns  
ns  
ns  
RG = 30Ω (External)  
30  
51  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
RthJC  
RthCS  
5
K/W  
K/W  
TO-220  
0.25  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
VSD  
trr  
VGS = -10 V, IF = 100 mA  
Note1  
1.0  
1.5  
V
IF = 0.75 A, -di/dt = 10 A/μs,  
VDS = 25 V, VGS = -10V  
1.5 μs  
TO-251 AA Outline  
Note1: Pulse test, t 300 μs, duty cycle d 2 %  
TO-252 AA Outline  
Dim. Millimeter  
Inches  
Min. Max. Min.  
Max.  
A
A1  
2.19 2.38 0.086 0.094  
0.89 1.14 0.035 0.045  
A2  
b
0
0.13  
0
0.005  
0.64 0.89 0.025 0.035  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
D
D1  
5.97 6.22 0.235 0.245  
4.32 5.21 0.170 0.205  
A
A1  
2.19  
0.89  
2.38  
1.14  
.086  
0.35  
.094  
.045  
b
b1  
b2  
0.64  
0.76  
5.21  
0.89  
1.14  
5.46  
.025  
.030  
.205  
.035  
.045  
.215  
E
E1  
6.35 6.73 0.250 0.265  
4.32 5.21 0.170 0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090BSC  
0.180BSC  
c
c1  
0.46  
0.46  
0.58  
0.58  
.018  
.018  
.023  
.023  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
D
5.97  
6.22  
.235  
.245  
E
e
e1  
6.35  
2.28  
4.57  
6.73  
BSC  
BSC  
.250  
.090  
.180  
.265  
BSC  
BSC  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
H
17.02  
17.78  
.670  
.700  
L
8.89  
1.91  
0.89  
1.15  
9.65  
2.28  
1.27  
1.52  
.350  
.075  
.035  
.045  
.380  
.090  
.050  
.060  
L1  
L2  
L3  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
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