IXTQ 96N15P
IXTT 96N15P
VDSS
ID25
= 150 V
= 96 A
PolarHTTM
Power MOSFET
RDS(on) = 24 mΩ
N-Channel Enhancement Mode
Preliminary Data Sheet
TO-3P(IXTQ)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 175°C
150
150
V
V
TJJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
20
V
ID25
ID(RMS)
IDM
T
= 25°C
96
75
250
60
A
A
A
A
G
ECxternal lead current limit
D
(TAB)
S
T
= 25°C, pulse width limited by TJM
IAR
TCC = 25°C
EAR
EAS
T
= 25°C
40
1.0
mJ
J
TCC = 25°C
TO-268 (IXTT)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
G
S
TC = 25°C
480
W
D (TAB)
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
Features
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Md
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
z
z
Weight
TO-3P
TO-268
5.5
5.0
g
g
Advantages
Symbol
TestConditions
Characteristic Values
z
Easy to mount
Space savings
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
150
V
V
z
High power density
2.5
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 150°C
PolarHTTM DMOStransistors
utilize proprietary designs and
process. US patent is pending.
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
24 mΩ
DS99131C(05/04)
© 2004 IXYS All rights reserved
