TM
Central
CYTA44D
Semiconductor Corp.
SURFACE MOUNT
DUAL, ISOLATED NPN HIGH VOLTAGE
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYTA44D
type consists of two (2) isolated NPN high
voltage silicon transistors packaged in an epoxy
molded SOT-228 surface mount case.
Manufactured by the epitaxial planar process,
this SUPERmini™ device is ideal for high
voltage applications.
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
450
400
6.0
V
CBO
CEO
EBO
V
V
I
300
2.0
mA
W
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J
-65 to +150
62.5
°C
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
500
100
UNITS
nA
nA
nA
V
I
V
V
V
=400V
=400V
=4.0V
CBO
CB
CE
BE
I
CES
I
EBO
BV
I =100µA
450
450
400
6.0
CBO
C
BV
I =100µA
C
V
CES
BV
I =1.0mA
V
CEO
C
BV
I =10µA
E
V
EBO
V
I =1.0mA, I =0.1mA
0.40
0.50
0.75
0.75
V
CE(SAT)
C
B
V
I =10mA, I =1.0mA
V
CE(SAT)
C
B
V
I =50mA, I =5.0mA
V
CE(SAT)
C
B
V
I =10mA, I =1.0mA
V
BE(SAT)
C
B
h
V
=10V, I =1.0mA
40
50
45
20
20
FE
CE
CE
CE
CE
CE
CB
EB
C
h
V
V
V
V
V
V
=10V, I =10mA
C
200
FE
h
=10V, I =50mA
FE
C
h
=10V, I =100mA
C
FE
f
=10V, I =10mA, f=10MHz
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
E
=0.5V, I =0, f=1.0MHz
C
7.0
ob
C
ib
130
pF
R1 (11-August 2005)
