CYT1933D
SURFACE MOUNT
DUAL, ISOLATED
COMPLEMENTARY
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT1933D type
consists of one (1) NPN silicon transistor and one (1)
complementary PNP silicon transistor packaged in
an epoxy molded SOT-228 surface mount case. This
SUPERmini™ device is manufactured by the epitaxial
planar process.
NPN/PNP SILICON TRANSISTORS
MARKING: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
NPN (Q1)
120
PNP (Q2)
80
UNITS
A
Collector-Base Voltage
V
V
V
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
80
80
CEO
V
7.0
5.0
V
EBO
Continuous Collector Current
Peak Collector Current
I
1.0
1.0
A
C
I
1.5
1.5
A
CM
Power Dissipation
P
D
2.0
W
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
nA
nA
nA
V
I
V
V
V
=60V
=90V
=5.0V
-
-
-
-
50
CBO
CB
CB
BE
I
-
10
-
CBO
I
-
10
-
10
EBO
BV
I =10μA
-
-
80
-
-
CBO
C
BV
I =100μA
C
120
-
-
V
CBO
BV
I =10mA
-
-
80
-
-
V
CEO
C
BV
I =30mA
C
80
-
-
V
CEO
BV
I =10μA
-
-
5.0
-
-
-
V
EBO
E
BV
I =100μA
E
7.0
-
V
EBO
V
I =150mA, I =15mA
-
-
-
-
-
-
-
-
0.20
-
0.15
0.50
0.90
1.10
-
V
CE(SAT)
C
B
V
I =500mA, I =50mA
0.50
-
V
CE(SAT)
C
B
V
I =150mA, I =15mA
1.10
-
V
BE(SAT)
C
B
V
I =500mA, I =50mA
-
-
-
-
-
-
V
BE(SAT)
C
B
h
V
=5.0V, I =0.1mA
75
100
70
25
FE
CE
CE
CE
CE
C
h
V
V
V
=5.0V, I =100mA
C
300
-
FE
h
=5.0V, I =500mA
FE
C
h
=5.0V, I =1.0A
C
-
FE
R2 (13-August 2010)
