请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

NZT6727

型号：

NZT6727

描述：

PNP通用放大器[ PNP General Purpose Amplifier ]

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

3 页

PDF大小：

40 K

下载PDF手册
NZT6727  
PNP General Purpose Amplifier  
4
•
This device is designed for general purpose medium power amplifiers  
and switches requiring collecor currents to 1.0A.  
Sourced from process 77.  
•
3
2
1
SOT-223  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-40  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
-50  
V
CBO  
EBO  
-5.0  
V
I
- Continuous  
-1.5  
A
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
°C  
J
STG  
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Sustaining Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= -10mA, I = 0  
-40  
-50  
-5.0  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= -1.0mA, I = 0  
E
= -100µA, I = 0  
V
C
I
I
V
V
= -50V, I = 0  
-0.1  
-0.1  
µA  
µA  
CB  
EB  
E
Emitter Cut-off Current  
= -5.0V, I = 0  
C
EBO  
On Characteristics  
h
DC Current Gain  
I
I
I
= -10mA, V = -1.0V  
55  
60  
50  
FE  
C
C
C
CE  
= -100mA, V = -1.0  
CE  
= -1.0A, V = -1.0V  
250  
-0.5  
-1.2  
CE  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= -1.0A, I = -100mA  
V
V
CE  
C
C
B
= -1.0A, V = -1.0V  
BE  
CE  
Small Signal Characteristics  
h
Small Signal current Gain  
Collector-Base Capacitance  
I
= -50mA, V = -10V, f = 20MHz  
2.5  
25  
30  
fe  
C
CE  
C
V
= -10V, I = 0, f = 1.0MHz  
pF  
cb  
CB  
E
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
1.0  
8.0  
W
mW/°C  
D
R
Thermal Resistance, Junction to Ambient  
125  
°C/W  
θJA  
2
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm .  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  
Package Dimensions  
SOT-223  
3.00 ±0.10  
MAX1.80  
+0.04  
–0.02  
0.06  
2.30 TYP  
4.60 ±0.25  
0.70 ±0.10  
°
~10  
°
0
+0.10  
–0.05  
(0.95)  
(0.95)  
0.25  
6.50 ±0.20  
Dimensions in Millimeters  
©2003 Fairchild Semiconductor Corporation  
Rev. A, December 2003  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT Quiet Series™ LittleFET™  
Power247™  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
ActiveArray™  
Bottomless™  
CoolFET™  
FAST®  
MICROCOUPLER™ PowerTrench®  
FASTr™  
FRFET™  
MicroFET™  
MicroPak™  
QFET®  
QS™  
TinyLogic®  
CROSSVOLT™ GlobalOptoisolator™ MICROWIRE™  
QT Optoelectronics™ TINYOPTO™  
DOME™  
GTO™  
HiSeC™  
I2C™  
ImpliedDisconnect™ OCXPro™  
ISOPLANAR™  
MSX™  
MSXPro™  
OCX™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
TruTranslation™  
UHC™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT™  
UltraFET®  
SILENT SWITCHER® VCX™  
SMART START™  
SPM™  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
POP™  
Across the board. Around the world.™  
The Power Franchise™  
Programmable Active Droop™  
Stealth™  
SuperSOT™-3  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2003 Fairchild Semiconductor Corporation  
Rev. I5  
厂商 型号 描述 页数 下载

FAIRCHILD

 		NZT44H8 NPN功放[ NPN Power Amplifier ] 4 页

TI

 		NZT44H8-S62Z [ 8000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261 ] 4 页

FAIRCHILD

 		NZT44H8D84Z [ Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

FAIRCHILD

 		NZT44H8L99Z [ Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

FAIRCHILD

 		NZT44H8S62Z [ Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

FAIRCHILD

 		NZT44H8_NL [ Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 8 页

FAIRCHILD

 		NZT45C11 PNP电流驱动器晶体管[ PNP Current Driver Transistor ] 3 页

FAIRCHILD

 		NZT45C11D84Z [ Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin ] 3 页

FAIRCHILD

 		NZT45C11L99Z [ Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin ] 3 页

FAIRCHILD

 		NZT45H8 PNP功率放大器[ PNP Power Amplifier ] 4 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.250088s