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IXTV270N055T2S

型号：

IXTV270N055T2S

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

211 K

下载PDF手册
Advance Technical Information  
TrenchT2TM  
Power MOSFET  
VDSS = 55V  
ID25 = 270A  
RDS(on) ≤ 3.0mΩ  
IXTV270N055T2  
IXTV270N055T2S  
N-Channel Enhancement Mode  
Avalanche Rated  
PLUS220 (IXTV)  
Fast Intrinsic Rectifier  
G
D
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
PLUS220SMD (IXTV_S)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
S
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
270  
120  
600  
A
A
A
D (Tab)  
G = Gate  
D
= Drain  
TC = 25°C, Pulse Width Limited by TJM  
S = Source Tab = Drain  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
80  
600  
625  
A
mJ  
W
EAS  
PD  
Features  
TJ  
- 55 ... +175  
175  
°C  
°C  
°C  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
TJM  
Tstg  
- 55 ... +175  
z Fast Intrinsic Rectifier  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
z
Low RDS(on)  
FC  
Mounting Force (PLUS220)  
PLUS220  
11..65/2.5..14.6  
4.0  
N/lb.  
g
Advantages  
Weight  
z
Easy to Mount  
Space Savings  
z
z
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
55  
V
V
• Synchronous Buck Converters  
• High Current Switching Power  
Supplies  
2.0  
4.0  
±200 nA  
μA  
• Battery Powered Electric Motors  
IDSS  
5
• Resonant-Mode Power Supplies  
• Electronics Ballast Application  
• Class D Audio Amplifiers  
TJ = 150°C  
250 μA  
3.0 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Note 1  
2.4  
DS100263(05/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTV270N055T2  
IXTV270N055T2S  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
48  
80  
S
Ciss  
Coss  
Crss  
9700  
1470  
250  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
19  
20  
40  
37  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
RG = 2Ω (External)  
Qg(on)  
Qgs  
167  
35  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
43  
RthJC  
RthCH  
0.24 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
270  
1080  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
TO-220 Outline  
trr  
63  
3.8  
ns  
A
IF = 0.5 • ID25, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 27V  
120  
nC  
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTV270N055T2  
IXTV270N055T2S  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 10V  
8V  
10V  
9V  
8V  
7V  
7V  
6V  
6V  
5V  
4V  
5V  
4V  
0
0
0
1
2
3
4
5
6
7
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
2.0  
350  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 135A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
280  
240  
200  
160  
120  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
7V  
6V  
I D = 270A  
I D = 135A  
5V  
4V  
40  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 135A Value vs.  
Drain Current  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
TJ = 175ºC  
VGS = 10V  
15V - - - - -  
TJ = 150ºC  
25ºC  
60  
- 40ºC  
40  
TJ = 25ºC  
20  
0
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
50  
100  
150  
200  
250  
300  
VGS - Volts  
ID - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTV270N055T2  
IXTV270N055T2S  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
140  
120  
100  
80  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
150ºC  
60  
TJ = 150ºC  
40  
TJ = 25ºC  
20  
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
VSD - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
= 1 MHz  
f
VDS = 27.5V  
I
I
D = 135A  
G = 10mA  
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Drain Current vs. Case Temperature  
Fig. 12. Forward-Bias Safe Operating Area  
140  
120  
100  
80  
1,000  
100  
10  
External Lead Current limit  
R
Limit  
DS(on)  
25µs  
External Lead Limit  
100µs  
1ms  
60  
10ms  
40  
100ms  
T
T
= 175ºC  
= 25ºC  
J
DC  
20  
C
Single Pulse  
0
1
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
TC - Degrees Centigrade  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTV270N055T2  
IXTV270N055T2S  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
32  
28  
24  
20  
16  
12  
8
24  
23  
22  
21  
20  
19  
18  
RG = 2ꢀ , VGS = 10V  
DS = 27.5V  
RG = 2Ω , VGS = 10V  
DS = 27.5V  
V
V
TJ = 125ºC  
I D = 100A  
I D = 200A  
TJ = 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
62  
58  
54  
50  
46  
42  
38  
34  
30  
350  
300  
250  
200  
150  
100  
50  
70  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 27.5V  
t f  
t
d(off) - - - -  
60  
50  
40  
30  
20  
10  
0
RG = 2Ω, VGS = 10V  
V
VDS = 27.5V  
I D = 200A , 100A  
I D = 100A  
I D = 200A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
280  
240  
200  
160  
120  
80  
280  
240  
200  
160  
120  
80  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
tf  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
RG = 2ꢀ, VGS = 10V  
TJ = 125ºC, VGS = 10V  
VDS = 27.5V  
I D = 100A  
VDS = 27.5V  
I D = 200A  
TJ = 25ºC, 125ºC  
40  
40  
0
0
40  
60  
80  
100  
120  
140  
160  
180  
200  
2
4
6
8
10  
12  
14  
16  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTV270N055T2  
IXTV270N055T2S  
0.40  
Fig. 19. Maximum Transient Thermal Impedance  
adas  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_270N055T2(68)5-13-10-A  
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