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IXTP75N10P

型号：

IXTP75N10P

描述：

N沟道增强模式[ N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

582 K

下载PDF手册
Advanced Technical Information  
PolarHTTM  
Power MOSFET  
IXTQ 75N10P  
IXTA 75N10P  
IXTP 75N10P  
VDSS = 100 V  
ID25 = 75 A  
RDS(on) = 25 mΩ  
N-Channel Enhancement Mode  
TO-3P(IXTQ)  
Symbol  
TestConditions  
Maximum Ratings  
G
VDSS  
VDGR  
T
= 25°C to 175°C  
100  
100  
V
V
TJJ = 25°C to 175°C; RGS = 1 MΩ  
D
(TAB)  
S
VGSM  
20  
V
TO-220 (IXTP)  
ID25  
IDM  
T
= 25°C  
75  
A
A
TCC = 25°C, pulse width limited by TJM  
TC = 25°C  
200  
IAR  
50  
A
(TAB)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
G
D
S
1.0  
TO-263 (IXTA)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 10 Ω  
,
10  
V/ns  
TC = 25°C  
300  
W
G
S
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
(TAB)  
G = Gate  
D = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering  
TO-263 package for 10s  
300  
260  
°C  
°C  
S = Source  
TAB = Drain  
Features  
Md  
Mounting torque  
(TO-3P / TO-220)  
1.13/10 Nm/lb.in.  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Weight  
TO-3P  
TO-220  
TO-263  
5.5  
4
3
g
g
g
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
100  
V
V
z
Easy to mount  
Space savings  
2.5  
5.0  
z
z
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
21  
25 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99158(03/04)  
© 2004 IXYS All rights reserved  
IXTA 75N10P IXTP 75N10P  
IXTQ 75N10P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
20  
28  
S
Ciss  
Coss  
Crss  
2250  
890  
pF  
pF  
pF  
275  
td(on)  
tr  
td(off)  
tf  
27  
53  
66  
45  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 10 Ω (External)  
Qg(on)  
Qgs  
74  
18  
40  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCK  
0.42 K/W  
(TO-3P)  
(TO-220)  
0.21  
0.25  
K/W  
K/W  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
75  
A
A
V
ISM  
Repetitive  
200  
1.5  
TO-220 (IXTA) Outline  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 75 V  
120  
1.4  
ns  
QRM  
µC  
TO-263 (IXTP) Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
Pins: 1 - Gate  
2 - Drain  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
4,850,072  
4,931,844  
5,034,796  
5,063,307  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
ofthefollowingU.S.patents:  
4,835,592  
4,881,106  
5,017,508  
5,049,961  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXTA 75N10P IXTP 75N10P  
IXTQ 75N10P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
º
º
@ 25 C  
@ 25 C  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
V
GS  
= 10V  
9V  
8V  
8V  
7V  
7V  
6V  
6V  
0
0
0
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
2.1  
2.4  
0
1
2
3
4
5
6
7
8
9
10 11 12  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
@ 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2
V
= 10V  
9V  
GS  
V
GS  
= 10V  
1.8  
1.6  
1.4  
1.2  
1
8V  
7V  
I
= 75A  
D
I
= 37.5A  
D
6V  
5V  
0.8  
0.6  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.8  
2.6  
2.4  
2.2  
2
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
T = 125ºC  
J
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
-50  
-25  
0
25  
50  
75  
100 125 150  
20  
40  
60  
80  
100  
120  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTA 75N10P IXTP 75N10P  
IXTQ 75N10P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
120  
105  
90  
75  
60  
45  
30  
15  
0
40  
36  
32  
28  
24  
20  
16  
12  
8
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
4
0
5
0.5  
0
6
7
8
9
10  
11  
1.7  
40  
0
0
1
20  
40  
60  
80 100 120 140 160 180  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
200  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
DS  
= 50V  
I
I
= 37.5A  
= 10mA  
D
G
60  
T = 125ºC  
J
40  
T = 25ºC  
J
20  
0
0.7  
0.9  
1.1  
1.3  
1.5  
10  
20  
30  
40  
50  
60  
70  
80  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
f = 1MHz  
T = 150ºC  
J
R
Limit  
DS(on)  
T
C
= 25ºC  
C
iss  
25µs  
100µs  
C
oss  
1ms  
10ms  
DC  
C
rss  
1
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
4,850,072  
4,931,844  
5,034,796  
5,063,307  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
ofthefollowingU.S.patents:  
4,835,592  
4,881,106  
5,017,508  
5,049,961  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXTA 75N10P IXTP 75N10P  
IXTQ 75N10P  
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
1
10  
100  
1000  
Puls e W idth - millis ec onds  
© 2004 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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