IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Symbol
gfs
TestConditions
Characteristic Values
TO-3P Outline
TO-268 Outline
6,404,065B1 6,162,665
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
52
S
Ciss
Coss
Crss
4800
900
pF
pF
pF
210
td(on)
tr
td(off)
tf
29
20
78
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 4 Ω (External)
Qg(on)
Qgs
142
32
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
74
RthJC
RthCH
0.25 K/W
TO-3P
TO-264
0.21
0.15
K/W
K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
82
A
A
V
ISM
Repetitive
250
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
200
2.0
ns
QRM
µC
TO-264 AA Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,534,343
6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
