请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTT69N30P

型号：

IXTT69N30P

描述：

PolarHT功率MOSFET[ PolarHT Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

108 K

下载PDF手册
IXTQ 69N30P  
IXTT 69N30P  
VDSS  
ID25  
= 300 V  
= 69 A  
PolarHTTM  
Power MOSFET  
RDS(on) = 49 mΩ  
N-Channel Enhancement Mode  
TO-3P(IXTQ)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
300  
300  
V
V
VGSS  
VGSM  
Transient  
±20  
±30  
V
V
G
D
(TAB)  
ID25  
IDM  
TC = 25°C  
69  
A
A
S
TC = 25°C, pulse width limited by TJM  
200  
IAR  
TC = 25°C  
69  
A
TO-268 (IXTT)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G
S
D (TAB)  
TC = 25°C  
500  
W
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
! International standard packages  
! Unclamped Inductive Switching (UIS)  
rated  
! Low package inductance  
- easy to drive and to protect  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
Weight  
TO-3P  
TO-268  
5.5  
5.0  
g
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
!
Easy to mount  
Space savings  
High power density  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
!
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = ±20 VDC, VDS = 0  
300  
V
V
!
2.5  
5.0  
±100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
49 mΩ  
DS99078A(04/04)  
© 204 IXYS All rights reserved  
IXTQ 69N30P  
IXTT 69N30P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-3P (IXTQ) Outline  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
48  
S
Ciss  
Coss  
Crss  
4960  
760  
pF  
pF  
pF  
190  
td(on)  
tr  
td(off)  
tf  
25  
25  
75  
27  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
156  
32  
180 nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
79  
nC  
RthJC  
RthCK  
0.25 K/W  
K/W  
(TO-247, TO-3P)  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
69  
A
A
V
TO-268 Outline  
ISM  
Repetitive  
200  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
TJM  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
250  
3.0  
ns  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTQ 69N30P  
IXTT 69N30P  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
180  
160  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
8V  
7V  
8V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
2
4
6
8
10 12 14 16 18 20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
8V  
7V  
ID = 69A  
1.8  
1.6  
1.4  
1.2  
1
6V  
5V  
ID = 34.5A  
0.8  
0.6  
0.4  
1
2
3 4  
VD S - Volts  
5
6
7
8
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.8  
3.4  
3
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
2.6  
2.2  
1.8  
1.4  
1
TJ = 125ºC  
TJ = 25ºC  
0.6  
20  
40  
60  
80 100 120 140 160 180  
-50  
-25  
0
25  
TC - Degrees Centigrade  
50  
75  
100 125 150  
I D - Amperes  
© 204 IXYS All rights reserved  
IXTQ 69N30P  
IXTT 69N30P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80  
100  
120  
140  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
200  
VDS = 150V  
ID = 34.5A  
G = 10mA  
180  
160  
140  
120  
100  
80  
I
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3  
0
20  
40  
60  
Q G - nanoCoulombs  
80  
100 120 140 160  
VS D - Volts  
Fig. 12. Forward-Bias Safe  
Operating Area  
Fig. 11. Capacitance  
1000  
10000  
f = 1MHz  
TC = 25ºC  
RDS(on) Limit  
C
C
iss  
25µs  
100  
10  
1
1ms  
1000  
oss  
10ms  
DC  
C
rss  
100  
0
5
10  
15  
V
20  
- Volts  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
riDS sions.  
IXTQ 69N30P  
IXTT 69N30P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 204 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.191107s