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IXTT64N25P

型号：

IXTT64N25P

描述：

PolarHT功率MOSFET[ PolarHT Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

578 K

下载PDF手册
IXTQ 64N25P VDSS  
IXTT 64N25P ID25  
= 250 V  
= 64 A  
PolarHTTM  
Power MOSFET  
RDS(on) = 48 mΩ  
N-Channel Enhancement Mode  
Preliminary Data Sheet  
TO-3P(IXTQ)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
250  
250  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGSM  
20  
V
ID25  
IDM  
TC = 25°C  
64  
A
A
G
D
(TAB)  
TC = 25°C, pulse width limited by TJM  
160  
S
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
40  
mJ  
J
TO-268 (IXTT)  
1.0  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G
S
D (TAB)  
TC = 25°C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
z
z
Weight  
TO-3P  
TO-268  
5.5  
5.0  
g
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
z
Easy to mount  
Space savings  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
250  
V
V
z
High power density  
2.5  
5.0  
100 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25 µA  
250 µA  
TJ = 125°C  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
48 mΩ  
DS99120A(02/04)  
© 2004 IXYS All rights reserved  
IXTQ 64N25P  
IXTT 64N25P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
22  
30  
S
Ciss  
Coss  
Crss  
3450  
640  
pF  
pF  
pF  
155  
td(on)  
tr  
td(off)  
tf  
21  
23  
60  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
105  
24  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
53  
RthJC  
RthCK  
0.31 K/W  
K/W  
(TO-3P)  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
64  
A
A
V
TO-268 Outline  
ISM  
Repetitive  
160  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
200  
3.0  
ns  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTQ 64N25P  
IXTT 64N25P  
Fig. 1. Output Characteristics  
@ 25 C  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
º
64  
56  
48  
40  
32  
24  
16  
8
180  
160  
140  
120  
100  
80  
V
GS  
= 10V  
V
GS  
= 10V  
9V  
9V  
8V  
7V  
8V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 C  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
64  
56  
48  
40  
32  
24  
16  
8
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
GS  
= 10V  
9V  
V
GS  
= 10V  
8V  
7V  
I
= 64A  
D
6V  
5V  
I
= 32A  
D
0.7  
0.4  
0
0
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0.7  
-50  
-25  
0
25  
50  
75  
100 125 150  
0
30  
60  
90  
120  
150  
180  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTQ 64N25P  
IXTT 64N25P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
120  
105  
90  
75  
60  
45  
30  
15  
0
60  
50  
40  
30  
20  
10  
0
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
4
0.4  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
0
15  
30  
45  
60  
75  
90 105 120 135  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
180  
150  
120  
90  
9
8
7
6
5
4
3
2
1
0
V
DS  
= 125V  
I
I
= 32A  
D
G
= 10mA  
60  
T = 125ºC  
J
30  
T = 25ºC  
J
0
0.6  
0.8  
1
1.2  
1.4  
0
10 20 30 40 50 60 70 80 90 100 110  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10000  
1000  
100  
f = 1MHz  
T = 150ºC  
J
C
iss  
R
Limit  
T = 25ºC  
C
DS(on)  
25µs  
100µs  
1ms  
C
C
oss  
rss  
10ms  
DC  
1
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXTQ 64N25P  
IXTT 64N25P  
Fig. 13. M axim um Trans ie nt The rm al Re s is tance  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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