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1T409

型号:

1T409

描述:

变容二极管[ Variable Capacitance Diode ]

品牌:

SONY[ SONY CORPORATION ]

页数:

4 页

PDF大小:

52 K

1T409  
Variable Capacitance Diode  
Description  
M-290  
The 1T409 is a variable capacitance diode  
designed for UHF-band VCO using a super-small-  
miniature flat package (SSVC).  
Features  
Super-small-miniature flat package  
Low series resistance: 0.4 Max. (f=470 MHz)  
Large capacitance ratio: 2.5 Typ.  
(C2/C10)  
Small leakage current: 3 nA Max. (VR=15 V)  
Absolute Maximum Ratings (Ta=25 °C)  
Reverse voltage  
Operating temperature Topr  
Storage temperature  
VR  
15  
V
Applications  
–35 to +85  
°C  
UHF-band VCO  
Tstg –65 to +150 °C  
Local oscillator for cordless telephone  
Local oscillator for cellular equipment  
Structure  
Silicon epitaxial planar type diode  
Electrical Characteristics  
(Ta=25 °C)  
Item  
Symbol  
Conditions  
VR=15 V  
Min.  
Typ.  
Max.  
Unit  
Reverse current  
Diode capacitance  
IR  
C2  
3
nA  
pF  
pF  
VR=2 V, f=1 MHz  
VR=10 V, f=1 MHz  
14.26  
5.46  
2.2  
15.96  
6.46  
C10  
C2/C10  
rs  
Capacitance ratio  
Series resistance  
2.5  
0.3  
VR=5V, f=470 MHz  
0.4  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
—1—  
E96144A98-TE  
1T409  
Diode capacitance vs. Reverse voltage  
Ta=25°C  
Reverse current vs. Ambient temperature  
VR=15V  
100  
50  
10  
20  
10  
5
1
2
1
0.1  
–20  
1
2
5
10  
20  
50  
0
20  
40  
60  
80  
VR-Reverse voltage (V)  
Ta-Ambient temperature (°C)  
Forward voltage vs. Ambient temperature  
IF=1mA  
Reverse voltage vs. Ambient temperature  
IR=10µA  
0.90  
0.80  
35  
30  
0.70  
0.60  
25  
20  
–20  
–20  
0
20  
40  
60  
80  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
Ta-Ambient temperature (°C)  
—2—  
1T409  
Diode capacitance vs. Ambient temperature  
1.03  
1.02  
VR=1V  
VR=2V  
VR=7V  
VR=10V  
1.01  
1.00  
0.99  
0.98  
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
Reverse current vs. Reverse voltage  
Temperature coefficient of diode capacitance  
100  
1000  
500  
Ta=80°C  
10  
200  
Ta=60°C  
100  
50  
1
1
2
5
10  
20  
50  
VR-Reverse voltage (V)  
Ta=25°C  
0.1  
1
3
10  
30  
VR-Reverse voltage (V)  
—3—  
1T409  
Package Outline Unit : mm  
M-290  
0.8 }0.1  
c
b
10 KMAX  
BASEMETAL WITH PLATING  
{0.05  
c
b
0.11 }0.005  
0.3 }0.025  
0.11  
0.3  
|0.01  
{0.05  
|0.02  
EPOXY RESIN  
PACKAGE MATERIAL  
LEAD TREATMENT  
LEAD MATERIAL  
SOLDER PLATING  
SONYCODE  
EIAJCODE  
M-290  
COPPER  
0.002g  
JEDEC CODE  
PACKAGEWEIGHT  
Mark  
1 : Cathode  
2 : Anode  
2
1
S9  
—4—  
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