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1T407

型号:

1T407

描述:

变容二极管[ Variable Capacitance Diode ]

品牌:

SONY[ SONY CORPORATION ]

页数:

4 页

PDF大小:

55 K

1T407  
Variable Capacitance Diode  
Description  
M-290  
The 1T407 is a variable capacitance diode  
designed for electronic tuning of wide-band CATV  
tuners using a super-small-miniature flat package  
(SSVC).  
Features  
Super-small-miniature flat package  
Low series resistance: 1.1 Max. (f=470 MHz)  
Large capacitance ratio: 15.5 Typ.  
(C2/C25)  
(C1/C28)  
(C25/C28)  
Absolute Maximum Ratings (Ta=25 °C)  
Reverse voltage 34  
Operating temperature Topr –20 to +75 °C  
Storage temperature Tstg –65 to +150 °C  
21.5 Min.  
1.03 Min.  
VR  
V
Small leakage current: 10 nA Max. (VR=28 V)  
Capacitance deviation in a matching group:  
within 2 %  
Applications  
Electronic tuning of wide-band CATV tuners  
Structure  
Silicon epitaxial planar type diode  
Electrical Characteristics  
(Ta=25 °C)  
Item  
Symbol  
Conditions  
VR=28 V  
Min.  
Typ.  
15.5  
Max.  
10  
Unit  
Reverse current  
Reverse voltage  
IR  
VR  
nA  
V
IR=1 µA  
34  
C2  
VR=2 V, f=1 MHz  
VR=25 V, f=1 MHz  
42.86  
2.56  
14.5  
21.5  
1.03  
50.96  
2.99  
pF  
pF  
Diode capacitance  
Capacitance ratio  
C25  
C2/C25  
C1/C28  
C25/C/28  
rs  
Series resistance  
Capacitance  
CD=14 pF, f=470 MHz  
VR=1 to 28 V, f= MHz  
1.1  
2
deviation in a  
C  
%
matching group  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
—1—  
E95920-TE  
1T407  
Diode capacitance vs. Reverse voltage  
Ta=25°C  
Reverse current vs. Ambient temperature  
VR=28V  
100  
50  
100  
20  
10  
5
10  
2
1
1
2
5
10  
20  
50  
VR-Reverse voltage (V)  
1
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
Forward voltage vs. Ambient temperature  
IF=1mA  
Reverse voltage vs. Ambient temperature  
IR=10µ  
0.80  
50  
A
0.70  
0.60  
0.50  
45  
40  
35  
–20  
0
20  
40  
60  
80  
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
Ta-Ambient temperature (°C)  
—2—  
1T407  
Diode capacitance vs. Ambient temperature  
1.03  
1.02  
1.01  
VR=1V  
VR=2V  
VR=7V  
VR=25V  
VR=15V  
1.00  
0.99  
0.98  
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
Reverse current vs. Reverse voltage  
Ta=80°C  
Temperature coefficient of diode capacitance  
100  
1000  
500  
Ta=60°C  
Ta=25°C  
10  
200  
100  
50  
1
2
5
10  
20  
50  
1
VR-Reverse voltage (V)  
0.1  
1
3
10  
30  
VR-Reverse voltage (V)  
—3—  
1T407  
Package Outline Unit : mm  
M-290  
0.8 ± 0.1  
c
b
10° MAX  
BASE METAL WITH PLATING  
+ 0.05  
c
0.11 ± 0.005  
0.3 ± 0.025  
0.11  
0.3  
0.01  
+ 0.05  
0.02  
b
EPOXY RESIN  
PACKAGE MATERIAL  
LEAD TREATMENT  
LEAD MATERIAL  
SOLDER PLATING  
SONY CODE  
M-290  
EIAJ CODE  
COPPER  
0.002g  
JEDEC CODE  
PACKAGE WEIGHT  
Mark  
1 : Cathode  
2 : Anode  
1
2
S7  
—4—  
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