EZ8590
Pb
EZ8590
Pb Free Plating Product
85V,92A N-Channel Trench Process Power MOSFETs
General Description
EZ8590
(TO-220 HeatSink)
TSP8592 series is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
S
D
G
Features
● VDS=85V; ID=92A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
EZ8590F
(TO-220F FullPak)
Schematic Diagram
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
S
D
Application
G
VDS = 85 V
ID = 92A
●
●
●
●
64V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Inverter Application
EZ8590B
(TO-263/D2PAK)
D
●
Amplifier Application
S
RDS(ON) = 6.2 mΩ
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Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Value
85
Unit
V
VDS
Drain-Source Voltage (VGS=0V)
±25
92
V
VGS
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
A
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
64.4
368
30
A
(Note 1)
A
Drain Current-Continuous@ Current-Pulsed
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25℃)
Derating Factor
V/ns
W
139
0.93
625
W/℃
Single Pulse Avalanche Energy (Note 2)
EAS
mJ
Operating Junction and Storage Temperature Range
-55 To 175
℃
TJ,TSTG
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:T =25℃,VDD=40V,VG=10V,RG=25Ω
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Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/5
http://www.thinkisemi.com.tw/
