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0RHC

型号：

0RHC

品牌：

MGCHIP[ MagnaChip ]

页数：

10 页

PDF大小：

1159 K

下载PDF手册
MMF60R360P Datasheet  
MMF60R360P  
600V 0.36Ω N-channel MOSFET  
Description  
MMF60R360P is power MOSFET using magnachip’s advanced super junction technology that can  
realize very low on-resistance and gate charge. It will provide much high efficiency by using  
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to  
designers as well as low switching loss.  
Key Parameters  
Package & Internal Circuit  
D
Parameter  
VDS @ Tj,max  
RDS(on),max  
VTH,typ  
Value  
Unit  
V
650  
0.36  
3
Ω
V
G
ID  
11  
A
G
Qg,typ  
28  
nC  
D
S
S
Features  
Low Power Loss by High Speed Switching and Low On-Resistance  
100% Avalanche Tested  
Green Package – Pb Free Plating, Halogen Free  
Applications  
PFC Power Supply Stages  
Switching Applications  
Adapter  
Motor Control  
DC – DC Converters  
Ordering Information  
Order Code  
Marking  
60R360P  
Temp. Range  
Package  
Packing  
RoHS Status  
MMF60R360PTH  
-55 ~ 150℃  
TO-220F  
Tube  
Halogen Free  
1
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
600  
±30  
11  
Unit  
V
Note  
Drain – Source voltage  
Gate – Source voltage  
VGSS  
V
A
TC=25℃  
Continuous drain current(1)  
ID  
6.95  
33  
A
TC=100℃  
Pulsed drain current(2)  
IDM  
PD  
A
Power dissipation  
31  
W
Single - pulse avalanche energy  
MOSFET dv/dt ruggedness  
Diode dv/dt ruggedness(3)  
Storage temperature  
EAS  
dv/dt  
dv/dt  
Tstg  
Tj  
220  
50  
mJ  
V/ns  
V/ns  
℃
15  
-55 ~150  
150  
Maximum operating junction  
temperature  
℃
1) Id limited by maximum junction temperature  
2) Pulse width tP limited by Tj,max  
3) ISD ≤ ID, VDS peak ≤ V(BR)DSS  
Thermal Characteristics  
Parameter  
Symbol  
Rthjc  
Value  
4
Unit  
Thermal resistance, junction-case max  
Thermal resistance, junction-ambient max  
℃/W  
℃/W  
Rthja  
62.5  
2
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
Static Characteristics (Tc=25℃ unless otherwise specified)  
Parameter  
Symbol Min. Typ. Max. Unit Test Condition  
Drain – Source  
Breakdown voltage  
V(BR)DSS  
VGS(th)  
IDSS  
600  
-
3
-
-
4
V
V
VGS = 0V, ID=0.25mA  
VDS = VGS, ID=0.25mA  
VDS = 600V, VGS = 0V  
VGS = ±30V, VDS =0V  
VGS = 10V, ID = 3.8 A  
Gate Threshold Voltage  
2
-
Zero Gate Voltage  
Drain Current  
1
μA  
nA  
Ω
Gate Leakage Current  
IGSS  
-
-
100  
Drain-Source On  
State Resistance  
RDS(ON)  
-
0.32 0.36  
Dynamic Characteristics (Tc=25℃ unless otherwise specified)  
Parameter  
Symbol Min. Typ. Max. Unit Test Condition  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Ciss  
Coss  
Crss  
Co(er)  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
-
-
890  
670  
40  
26  
18  
40  
80  
30  
28  
7
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 25V, VGS = 0V,  
f = 1.0MHz  
pF  
ns  
Effective Output Capacitance  
Energy Related (4)  
VDS = 0V to 480V,  
VGS = 0V,f = 1.0MHz  
Turn On Delay Time  
Rise Time  
VGS = 10V, RG = 25Ω,  
VDS = 300V, ID = 11A  
Turn Off Delay Time  
Fall Time  
td(off)  
tf  
Total Gate Charge  
Gate – Source Charge  
Gate – Drain Charge  
Gate Resistance  
Qg  
VGS = 10V, VDS = 480V,  
ID = 11A  
Qgs  
Qgd  
RG  
nC  
10  
3.5  
Ω
VGS = 0V, f = 1.0MHz  
4) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS  
3
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)  
Parameter  
Symbol Min. Typ. Max. Unit Test Condition  
Continuous Diode Forward  
Current  
ISD  
VSD  
trr  
-
-
-
-
-
-
11  
A
V
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
-
1.4  
ISD = 11 A, VGS = 0 V  
375  
4.1  
21.8  
-
-
-
ns  
μC  
A
ISD = 11 A  
di/dt = 100 A/μs  
VDD = 100 V  
Qrr  
Irrm  
4
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
Characteristic Graph  
5
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
6
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
7
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
Test Circuit  
Same type as DUT  
VGS  
Qg  
100KΩ  
10V  
10V  
+
-
Qgs  
Qgd  
VDS  
1mA  
DUT  
10V  
Charge  
Fig15-2. Gate charge waveform  
Fig15-1. Gate charge measurement circuit  
trr  
DUT  
IFM  
0.5 IRM  
IF  
ta  
tb  
+
-
0.25 IRM  
VDS  
di/dt  
IS  
L
0.75 IRM  
IRM  
Rg  
10KΩ  
+
-
Same type as DUT  
VDD  
VR  
Vgs ± 15V  
VRM(REC)  
Fig16-1. Diode reverse recovery test circuit  
Fig16-1. Diode reverse recovery test waveform  
ID  
DUT  
VDS  
VDS  
Rg  
25Ω  
90%  
RL  
10%  
VGS  
Vgs  
tp  
+
VDD  
-
Td(on)  
tr  
Td(off)  
toff  
tf  
ton  
Fig17-1. Switching time test circuit for resistive load  
Fig17-2. Switching time waveform  
IAS  
DUT  
VDS  
BVDSS  
tp  
tAV  
Rg  
L
IAS  
VDD  
VDS(t)  
Vgs  
tp  
+
VDD  
-
Rds(on) * IAS  
Fig18-1. Unclamped inductive load test circuit  
Fig18-2. Unclamped inductive waveform  
8
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
Physical Dimension  
3 Leads, TO-220F  
Dimensions are in millimeters unless otherwise specified  
Symbol  
Min  
4.50  
0.63  
1.15  
0.33  
15.47  
9.60  
Nom  
Max  
4.93  
0.91  
1.47  
0.63  
A
b
b1  
C
D
E
16.13  
10.71  
e
2.54  
F
G
L
L1  
Q
2.34  
6.48  
12.24  
2.79  
2.52  
3.10  
3.00  
2.84  
6.90  
13.72  
3.67  
2.96  
3.50  
3.55  
Q1  
￠R  
9
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
MMF60R360P Datasheet  
DISCLAIMER:  
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power  
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be  
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such  
applications do so at their own risk and agree to fully defend and indemnify Seller.  
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility  
for use of any circuitry other than circuitry entirely included in a MagnaChip product.  
Semiconductor Ltd.  
is a registered trademark of MagnaChip  
10  
Nov. 2014 Revision 1.2  
MagnaChip Semiconductor Ltd.  
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