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NZT749

型号：

NZT749

描述：

PNP电流驱动器晶体管[ PNP Current Driver Transistor ]

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

3 页

PDF大小：

40 K

下载PDF手册
NZT749  
PNP Current Driver Transistor  
4
•
This device is designed for power amplifier, regulator and switching  
circuit where speed is important.  
•
Sourced from process 5P.  
3
2
1
SOT-223  
1. Base 2, 4. Collector 3. Emitter  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-25  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
CEO  
-35  
V
CBO  
EBO  
-5.0  
V
I
- Continuous  
-4.0  
A
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
I
I
I
= -10mA, I = 0  
-25  
-35  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= -100µA, I = 0  
E
= -10µA, I = 0  
-5.0  
V
C
I
I
V
V
= -30V, I = 0  
-100  
-0.1  
nA  
µA  
CB  
EB  
E
= -4V, I = 0  
EBO  
C
On Characteristics *  
h
DC Current Gain  
V
V
V
= -2.0V, I = -50mA  
70  
80  
65  
FE  
CE  
CE  
CE  
C
= -2.0V, I = -1.0A  
300  
C
= -2.0V, I = -2.0A  
C
V
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
I
= -1.0A, I = -100mA  
-0.3  
-1.25  
-1.0  
V
V
V
CE(sat)  
BE(sat)  
BE(on)  
C
C
C
B
= -1.0A, I = -100mA  
B
= -1.0A, V = -2.0V  
CE  
Small Signal Characteristics  
Current gain Bandwidth Product  
f
V
= -5.0V, I = -50mA  
75  
MHz  
T
CE  
C
f = 100MHz  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
1.2  
9.7  
W
mW/°C  
D
R
Thermal Resistance, Junction to Ambient  
103  
°C/W  
θJA  
©2004 Fairchild Semiconductor Corporation  
Rev. A, July 2004  
Package Dimensions  
SOT-223  
3.00 ±0.10  
MAX1.80  
+0.04  
–0.02  
0.06  
2.30 TYP  
4.60 ±0.25  
0.70 ±0.10  
°
~10  
°
0
+0.10  
–0.05  
(0.95)  
(0.95)  
0.25  
6.50 ±0.20  
Dimensions in Millimeters  
©2004 Fairchild Semiconductor Corporation  
Rev. A, July 2004  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
Power247™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
A
CEx™  
PowerSaver™  
PowerTrench®  
QFET®  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TinyLogic®  
HiSeC™  
TINYOPTO™  
TruTranslation™  
UHC™  
EcoSPARK™  
I2C™  
MSXPro™  
OCX™  
OCXPro™  
E2CMOS™  
i-Lo™  
ImpliedDisconnect™  
EnSigna™  
FACT™  
FACT Quiet Series™  
UltraFET®  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
POP™  
SILENT SWITCHER® VCX™  
SMART START™  
SPM™  
Across the board. Around the world.™  
The Power Franchise®  
Programmable Active Droop™  
Stealth™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2004 Fairchild Semiconductor Corporation  
Rev. I11  
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