IXTH50P10
IXTT50P10
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
13
22
S
Ciss
Coss
Crss
4350
1505
733
pF
pF
pF
∅ P
1
2
3
td(on)
tr
td(off)
tf
46
39
86
38
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Qg(on)
Qgs
140
25
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
85
RthJC
RthCS
0.42 °C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Source-Drain Diode
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
IS
VGS = 0V
- 50
A
A
R
4.32
5.49 .170 .216
ISM
VSD
trr
Repetitive, pulse width limited by TJM
IF = - 25A, VGS = 0V, Note 1
- 200
- 3.0
V
TO-268 (IXTT) Outline
IF = - 25A, di/dt = -100A/μs, VR = - 50V, VGS = 0V
180
ns
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
