IXTA02N250 IXTH02N250
IXTV02N250S
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 100V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
88
145
mS
Ciss
Coss
Crss
116
8
pF
pF
pF
∅ P
1
2
3
3
td(on)
tr
td(off)
tf
19
19
32
33
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 100Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Qg(on)
Qgs
7.4
0.7
5.3
nC
nC
nC
3 - Source
Dim.
Millimeter
Inches
Min. Max.
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Min. Max.
Qgd
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
1.5 °C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
TO-247 & PLUS220
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Source-Drain Diode
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
IS
VGS = 0V
200 mA
800 mA
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
PLUS220SMD Outline
IF = 100mA, VGS = 0V, Note 1
2.0
V
A
A1
E
E1
E1
L2
IF = 200mA, -di/dt = 50A/μs, VR = 100V
1.5
μs
D
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
A3
L4
L3
L
*Additional provisions for lead to lead voltage isolation are required at VDS > 1200V.
L1
2X b
c
e
A2
1. Gate
2. Drain
TO-263 Outline
3. Source 4. Drain
PIN: 1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
