ZXMD63N03X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDSS
LIMIT
30
UNIT
Drain-Source Voltage
Gate- Source Voltage
V
V
A
VGS
± 20
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d) ID
(VGS=4.5V; TA=70°C)(b)(d)
2.3
1.8
Pulsed Drain Current (c)(d)
IDM
14
1.5
14
A
A
A
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
IS
ISM
PD
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
0.87
6.9
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.04
8.3
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Tj:Tstg
-55 to +150
°C
SYMBOL
RθJA
VALUE
143
UNIT
°C/W
°C/W
°C/W
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
RθJA
100
RθJA
120
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - JULY 1999
34
